Wafer-Scale Ag2S-Based Memristive Crossbar Arrays with Ultra-Low Switching-Energies Reaching Biological Synapses
Highlights Wafer-scale integration of Ag2S-based memristive crossbar arrays was demonstrated using complementary metal–oxide–semiconductor (CMOS) compatible processes below 160 °C. A record-low threshold voltage for filament formation and an ultra-low switching-energy reaching that of biological syn...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2024-11-01
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| Series: | Nano-Micro Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1007/s40820-024-01559-2 |
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| Summary: | Highlights Wafer-scale integration of Ag2S-based memristive crossbar arrays was demonstrated using complementary metal–oxide–semiconductor (CMOS) compatible processes below 160 °C. A record-low threshold voltage for filament formation and an ultra-low switching-energy reaching that of biological synapses in wafer-scale CMOS-compatible memristive units were achieved. The energy-efficient resistance switching was enabled by self-supply of mobile Ag+ ions in Ag2S electrolytes and low silver-nucleation barrier at Ag/Ag2S interface. |
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| ISSN: | 2311-6706 2150-5551 |