Approach for designing and modelling of nanoscale DG MOSFET devices using Kriging metamodelling technique
In this study, the authors focus mainly on the investigation of Kriging interpolation method to elaborate surrogate models of the nanoscale double‐gate metal oxide silicon field effect transistors (DG MOSFET) analogue/RF performance under critical operational conditions. The elaboration of such mode...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2017-11-01
|
| Series: | IET Circuits, Devices and Systems |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/iet-cds.2017.0204 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|