Determination of electron‐hole pair creation energy in Cd0.9Zn0.1Te0.98Se0.02 quaternary semiconductor for room‐temperature gamma‐ray detection
Abstract We report the first‐time measurement of the electron‐hole pair (ehp) creation energy (Wehp) in novel Cd0.9Zn0.1Te0.98Se0.02 (CZTS) quaternary semiconductor. CZTS in single crystalline form is poised to be the future of large‐volume room‐temperature gamma‐ray detectors due to its excellent c...
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2024-09-01
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Online Access: | https://doi.org/10.1049/ell2.70007 |
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author | Sandeep K. Chaudhuri Ritwik Nag Utpal N. Roy Ralph B. James Krishna C. Mandal |
author_facet | Sandeep K. Chaudhuri Ritwik Nag Utpal N. Roy Ralph B. James Krishna C. Mandal |
author_sort | Sandeep K. Chaudhuri |
collection | DOAJ |
description | Abstract We report the first‐time measurement of the electron‐hole pair (ehp) creation energy (Wehp) in novel Cd0.9Zn0.1Te0.98Se0.02 (CZTS) quaternary semiconductor. CZTS in single crystalline form is poised to be the future of large‐volume room‐temperature gamma‐ray detectors due to its excellent compositional homogeneity with highly reduced defects, high‐Z (atomic number) constituents, wide bandgap (1.6 eV), and superior charge transport properties. Despite a great deal of study of the material and device properties since its inception, the Wehp in CZTS has not been measured experimentally. Accurate determination of Wehp is essential for calibration of the spectrometer and other theoretical calculations. In this study we have used an absolute calibration approach, which is based on an iterative approach that yields the Wehp as the best‐fit parameter. Using a 241Am alpha emitting radioisotope and a planar CZTS detector, the Wehp in CZTS was calculated to be 4.47 eV. The obtained value has been validated by accurately predicting the peak energy for gamma rays emitted by a 137Cs source and read by a CZTS detector with different dimensions. The dependences of the calculated Wehp value on the detector dimensions, type of interaction, and effect of charge trapping are also discussed. |
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id | doaj-art-b65dd832d6ba46d7aaf32d7f1d540b51 |
institution | Kabale University |
issn | 0013-5194 1350-911X |
language | English |
publishDate | 2024-09-01 |
publisher | Wiley |
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series | Electronics Letters |
spelling | doaj-art-b65dd832d6ba46d7aaf32d7f1d540b512024-11-08T14:35:49ZengWileyElectronics Letters0013-51941350-911X2024-09-016017n/an/a10.1049/ell2.70007Determination of electron‐hole pair creation energy in Cd0.9Zn0.1Te0.98Se0.02 quaternary semiconductor for room‐temperature gamma‐ray detectionSandeep K. Chaudhuri0Ritwik Nag1Utpal N. Roy2Ralph B. James3Krishna C. Mandal4Department of Electrical Engineering Molinaroli College of Engineering and Computing University of South Carolina Columbia SC USADepartment of Electrical Engineering Molinaroli College of Engineering and Computing University of South Carolina Columbia SC USASavannah River National Laboratory Aiken SC USASavannah River National Laboratory Aiken SC USADepartment of Electrical Engineering Molinaroli College of Engineering and Computing University of South Carolina Columbia SC USAAbstract We report the first‐time measurement of the electron‐hole pair (ehp) creation energy (Wehp) in novel Cd0.9Zn0.1Te0.98Se0.02 (CZTS) quaternary semiconductor. CZTS in single crystalline form is poised to be the future of large‐volume room‐temperature gamma‐ray detectors due to its excellent compositional homogeneity with highly reduced defects, high‐Z (atomic number) constituents, wide bandgap (1.6 eV), and superior charge transport properties. Despite a great deal of study of the material and device properties since its inception, the Wehp in CZTS has not been measured experimentally. Accurate determination of Wehp is essential for calibration of the spectrometer and other theoretical calculations. In this study we have used an absolute calibration approach, which is based on an iterative approach that yields the Wehp as the best‐fit parameter. Using a 241Am alpha emitting radioisotope and a planar CZTS detector, the Wehp in CZTS was calculated to be 4.47 eV. The obtained value has been validated by accurately predicting the peak energy for gamma rays emitted by a 137Cs source and read by a CZTS detector with different dimensions. The dependences of the calculated Wehp value on the detector dimensions, type of interaction, and effect of charge trapping are also discussed.https://doi.org/10.1049/ell2.70007semiconductor countersradiation detectionwide band gap semiconductors |
spellingShingle | Sandeep K. Chaudhuri Ritwik Nag Utpal N. Roy Ralph B. James Krishna C. Mandal Determination of electron‐hole pair creation energy in Cd0.9Zn0.1Te0.98Se0.02 quaternary semiconductor for room‐temperature gamma‐ray detection Electronics Letters semiconductor counters radiation detection wide band gap semiconductors |
title | Determination of electron‐hole pair creation energy in Cd0.9Zn0.1Te0.98Se0.02 quaternary semiconductor for room‐temperature gamma‐ray detection |
title_full | Determination of electron‐hole pair creation energy in Cd0.9Zn0.1Te0.98Se0.02 quaternary semiconductor for room‐temperature gamma‐ray detection |
title_fullStr | Determination of electron‐hole pair creation energy in Cd0.9Zn0.1Te0.98Se0.02 quaternary semiconductor for room‐temperature gamma‐ray detection |
title_full_unstemmed | Determination of electron‐hole pair creation energy in Cd0.9Zn0.1Te0.98Se0.02 quaternary semiconductor for room‐temperature gamma‐ray detection |
title_short | Determination of electron‐hole pair creation energy in Cd0.9Zn0.1Te0.98Se0.02 quaternary semiconductor for room‐temperature gamma‐ray detection |
title_sort | determination of electron hole pair creation energy in cd0 9zn0 1te0 98se0 02 quaternary semiconductor for room temperature gamma ray detection |
topic | semiconductor counters radiation detection wide band gap semiconductors |
url | https://doi.org/10.1049/ell2.70007 |
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