Determination of electron‐hole pair creation energy in Cd0.9Zn0.1Te0.98Se0.02 quaternary semiconductor for room‐temperature gamma‐ray detection

Abstract We report the first‐time measurement of the electron‐hole pair (ehp) creation energy (Wehp) in novel Cd0.9Zn0.1Te0.98Se0.02 (CZTS) quaternary semiconductor. CZTS in single crystalline form is poised to be the future of large‐volume room‐temperature gamma‐ray detectors due to its excellent c...

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Main Authors: Sandeep K. Chaudhuri, Ritwik Nag, Utpal N. Roy, Ralph B. James, Krishna C. Mandal
Format: Article
Language:English
Published: Wiley 2024-09-01
Series:Electronics Letters
Subjects:
Online Access:https://doi.org/10.1049/ell2.70007
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_version_ 1846173417311567872
author Sandeep K. Chaudhuri
Ritwik Nag
Utpal N. Roy
Ralph B. James
Krishna C. Mandal
author_facet Sandeep K. Chaudhuri
Ritwik Nag
Utpal N. Roy
Ralph B. James
Krishna C. Mandal
author_sort Sandeep K. Chaudhuri
collection DOAJ
description Abstract We report the first‐time measurement of the electron‐hole pair (ehp) creation energy (Wehp) in novel Cd0.9Zn0.1Te0.98Se0.02 (CZTS) quaternary semiconductor. CZTS in single crystalline form is poised to be the future of large‐volume room‐temperature gamma‐ray detectors due to its excellent compositional homogeneity with highly reduced defects, high‐Z (atomic number) constituents, wide bandgap (1.6 eV), and superior charge transport properties. Despite a great deal of study of the material and device properties since its inception, the Wehp in CZTS has not been measured experimentally. Accurate determination of Wehp is essential for calibration of the spectrometer and other theoretical calculations. In this study we have used an absolute calibration approach, which is based on an iterative approach that yields the Wehp as the best‐fit parameter. Using a 241Am alpha emitting radioisotope and a planar CZTS detector, the Wehp in CZTS was calculated to be 4.47 eV. The obtained value has been validated by accurately predicting the peak energy for gamma rays emitted by a 137Cs source and read by a CZTS detector with different dimensions. The dependences of the calculated Wehp value on the detector dimensions, type of interaction, and effect of charge trapping are also discussed.
format Article
id doaj-art-b65dd832d6ba46d7aaf32d7f1d540b51
institution Kabale University
issn 0013-5194
1350-911X
language English
publishDate 2024-09-01
publisher Wiley
record_format Article
series Electronics Letters
spelling doaj-art-b65dd832d6ba46d7aaf32d7f1d540b512024-11-08T14:35:49ZengWileyElectronics Letters0013-51941350-911X2024-09-016017n/an/a10.1049/ell2.70007Determination of electron‐hole pair creation energy in Cd0.9Zn0.1Te0.98Se0.02 quaternary semiconductor for room‐temperature gamma‐ray detectionSandeep K. Chaudhuri0Ritwik Nag1Utpal N. Roy2Ralph B. James3Krishna C. Mandal4Department of Electrical Engineering Molinaroli College of Engineering and Computing University of South Carolina Columbia SC USADepartment of Electrical Engineering Molinaroli College of Engineering and Computing University of South Carolina Columbia SC USASavannah River National Laboratory Aiken SC USASavannah River National Laboratory Aiken SC USADepartment of Electrical Engineering Molinaroli College of Engineering and Computing University of South Carolina Columbia SC USAAbstract We report the first‐time measurement of the electron‐hole pair (ehp) creation energy (Wehp) in novel Cd0.9Zn0.1Te0.98Se0.02 (CZTS) quaternary semiconductor. CZTS in single crystalline form is poised to be the future of large‐volume room‐temperature gamma‐ray detectors due to its excellent compositional homogeneity with highly reduced defects, high‐Z (atomic number) constituents, wide bandgap (1.6 eV), and superior charge transport properties. Despite a great deal of study of the material and device properties since its inception, the Wehp in CZTS has not been measured experimentally. Accurate determination of Wehp is essential for calibration of the spectrometer and other theoretical calculations. In this study we have used an absolute calibration approach, which is based on an iterative approach that yields the Wehp as the best‐fit parameter. Using a 241Am alpha emitting radioisotope and a planar CZTS detector, the Wehp in CZTS was calculated to be 4.47 eV. The obtained value has been validated by accurately predicting the peak energy for gamma rays emitted by a 137Cs source and read by a CZTS detector with different dimensions. The dependences of the calculated Wehp value on the detector dimensions, type of interaction, and effect of charge trapping are also discussed.https://doi.org/10.1049/ell2.70007semiconductor countersradiation detectionwide band gap semiconductors
spellingShingle Sandeep K. Chaudhuri
Ritwik Nag
Utpal N. Roy
Ralph B. James
Krishna C. Mandal
Determination of electron‐hole pair creation energy in Cd0.9Zn0.1Te0.98Se0.02 quaternary semiconductor for room‐temperature gamma‐ray detection
Electronics Letters
semiconductor counters
radiation detection
wide band gap semiconductors
title Determination of electron‐hole pair creation energy in Cd0.9Zn0.1Te0.98Se0.02 quaternary semiconductor for room‐temperature gamma‐ray detection
title_full Determination of electron‐hole pair creation energy in Cd0.9Zn0.1Te0.98Se0.02 quaternary semiconductor for room‐temperature gamma‐ray detection
title_fullStr Determination of electron‐hole pair creation energy in Cd0.9Zn0.1Te0.98Se0.02 quaternary semiconductor for room‐temperature gamma‐ray detection
title_full_unstemmed Determination of electron‐hole pair creation energy in Cd0.9Zn0.1Te0.98Se0.02 quaternary semiconductor for room‐temperature gamma‐ray detection
title_short Determination of electron‐hole pair creation energy in Cd0.9Zn0.1Te0.98Se0.02 quaternary semiconductor for room‐temperature gamma‐ray detection
title_sort determination of electron hole pair creation energy in cd0 9zn0 1te0 98se0 02 quaternary semiconductor for room temperature gamma ray detection
topic semiconductor counters
radiation detection
wide band gap semiconductors
url https://doi.org/10.1049/ell2.70007
work_keys_str_mv AT sandeepkchaudhuri determinationofelectronholepaircreationenergyincd09zn01te098se002quaternarysemiconductorforroomtemperaturegammaraydetection
AT ritwiknag determinationofelectronholepaircreationenergyincd09zn01te098se002quaternarysemiconductorforroomtemperaturegammaraydetection
AT utpalnroy determinationofelectronholepaircreationenergyincd09zn01te098se002quaternarysemiconductorforroomtemperaturegammaraydetection
AT ralphbjames determinationofelectronholepaircreationenergyincd09zn01te098se002quaternarysemiconductorforroomtemperaturegammaraydetection
AT krishnacmandal determinationofelectronholepaircreationenergyincd09zn01te098se002quaternarysemiconductorforroomtemperaturegammaraydetection