Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices
Abstract Multidimensional power devices can achieve performance beyond conventional limits by deploying charge‐balanced p‐n junctions. A key obstacle to developing such devices in many wide‐bandgap (WBG) and ultra‐wide bandgap (UWBG) semiconductors is the difficulty of native p‐type doping. Here the...
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Wiley-VCH
2025-01-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202300662 |
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| author | Yunwei Ma Yuan Qin Matthew Porter Joseph Spencer Zhonghao Du Ming Xiao Boyan Wang Yifan Wang Alan G. Jacobs Han Wang Marko Tadjer Yuhao Zhang |
| author_facet | Yunwei Ma Yuan Qin Matthew Porter Joseph Spencer Zhonghao Du Ming Xiao Boyan Wang Yifan Wang Alan G. Jacobs Han Wang Marko Tadjer Yuhao Zhang |
| author_sort | Yunwei Ma |
| collection | DOAJ |
| description | Abstract Multidimensional power devices can achieve performance beyond conventional limits by deploying charge‐balanced p‐n junctions. A key obstacle to developing such devices in many wide‐bandgap (WBG) and ultra‐wide bandgap (UWBG) semiconductors is the difficulty of native p‐type doping. Here the WBG nickel oxide (NiO) as an alternative p‐type material is investigated. The acceptor concentration (NA) in NiO is modulated by oxygen partial pressure during magnetron sputtering and characterized using a p‐n+ heterojunction diode fabricated on gallium oxide (Ga2O3) substrate. Capacitance and breakdown measurements reveal a tunable NA from < 1018 cm−3 to 2×1018 cm−3 with the practical breakdown field (EB) of 3.8 to 6.3 MV cm−1. This NA range allows for charge balance to n‐type region with reasonable process latitude, and EB is high enough to pair with many WBG and UWBG semiconductors. The extracted NA is then used to design a multidimensional Ga2O3 diode with NiO field‐modulation structure. The diodes fabricated with two different NA both achieve 8000 V breakdown voltage and 4.7 MV cm−1 average electric field. This field is over three times higher than the best report in prior multi‐kilovolt lateral devices. These results show the promise of p‐type NiO for pushing the performance limits of power devices. |
| format | Article |
| id | doaj-art-b409a95b6b5748cc96c23ad1e162974c |
| institution | Kabale University |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-b409a95b6b5748cc96c23ad1e162974c2025-01-10T13:40:16ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-01-01111n/an/a10.1002/aelm.202300662Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power DevicesYunwei Ma0Yuan Qin1Matthew Porter2Joseph Spencer3Zhonghao Du4Ming Xiao5Boyan Wang6Yifan Wang7Alan G. Jacobs8Han Wang9Marko Tadjer10Yuhao Zhang11Center for Power Electronics Systems (CPES) Virginia Polytechnic Institute and State University Blacksburg VA 24060 USACenter for Power Electronics Systems (CPES) Virginia Polytechnic Institute and State University Blacksburg VA 24060 USACenter for Power Electronics Systems (CPES) Virginia Polytechnic Institute and State University Blacksburg VA 24060 USACenter for Power Electronics Systems (CPES) Virginia Polytechnic Institute and State University Blacksburg VA 24060 USAMing Hsieh Department of Electrical Engineering University of Southern California Los Angeles CA 90089 USACenter for Power Electronics Systems (CPES) Virginia Polytechnic Institute and State University Blacksburg VA 24060 USACenter for Power Electronics Systems (CPES) Virginia Polytechnic Institute and State University Blacksburg VA 24060 USACenter for Power Electronics Systems (CPES) Virginia Polytechnic Institute and State University Blacksburg VA 24060 USAU.S. Naval Research Laboratory Washington DC 20375 USADepartment of Electrical and Electronic Engineering University of Hong Kong Hong Kong SAR 999077 ChinaU.S. Naval Research Laboratory Washington DC 20375 USACenter for Power Electronics Systems (CPES) Virginia Polytechnic Institute and State University Blacksburg VA 24060 USAAbstract Multidimensional power devices can achieve performance beyond conventional limits by deploying charge‐balanced p‐n junctions. A key obstacle to developing such devices in many wide‐bandgap (WBG) and ultra‐wide bandgap (UWBG) semiconductors is the difficulty of native p‐type doping. Here the WBG nickel oxide (NiO) as an alternative p‐type material is investigated. The acceptor concentration (NA) in NiO is modulated by oxygen partial pressure during magnetron sputtering and characterized using a p‐n+ heterojunction diode fabricated on gallium oxide (Ga2O3) substrate. Capacitance and breakdown measurements reveal a tunable NA from < 1018 cm−3 to 2×1018 cm−3 with the practical breakdown field (EB) of 3.8 to 6.3 MV cm−1. This NA range allows for charge balance to n‐type region with reasonable process latitude, and EB is high enough to pair with many WBG and UWBG semiconductors. The extracted NA is then used to design a multidimensional Ga2O3 diode with NiO field‐modulation structure. The diodes fabricated with two different NA both achieve 8000 V breakdown voltage and 4.7 MV cm−1 average electric field. This field is over three times higher than the best report in prior multi‐kilovolt lateral devices. These results show the promise of p‐type NiO for pushing the performance limits of power devices.https://doi.org/10.1002/aelm.202300662gallium oxidehigh voltagenickel oxidepower electronicspower semiconductor devicesultra‐wide bandgap |
| spellingShingle | Yunwei Ma Yuan Qin Matthew Porter Joseph Spencer Zhonghao Du Ming Xiao Boyan Wang Yifan Wang Alan G. Jacobs Han Wang Marko Tadjer Yuhao Zhang Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices Advanced Electronic Materials gallium oxide high voltage nickel oxide power electronics power semiconductor devices ultra‐wide bandgap |
| title | Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices |
| title_full | Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices |
| title_fullStr | Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices |
| title_full_unstemmed | Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices |
| title_short | Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices |
| title_sort | wide bandgap nickel oxide with tunable acceptor concentration for multidimensional power devices |
| topic | gallium oxide high voltage nickel oxide power electronics power semiconductor devices ultra‐wide bandgap |
| url | https://doi.org/10.1002/aelm.202300662 |
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