AlGaN-Based Ultraviolet PIN Photodetector Grown on Silicon Substrates Using SiN Nitridation Process and Step-Graded Buffers

AlGaN-Based Ultraviolet PIN Photodetector Grown on Silicon Substrates Using SiN Nitridation Process and Step-Graded Buffers

The integration of aluminum gallium nitride (AlGaN) with silicon substrates attracts significant attention due to the superior UV sensitivity of AlGaN and the cost-effectiveness as well as mechanical robustness of silicon. A PIN ultraviolet photodetector with a peak detection wavelength of 274 nm is...

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Bibliographic Details
Main Authors: Jian Li, Yan Maidebura, Yang Zhang, Gang Wu, Yanmei Su, Konstantin Zhuravlev, Xin Wei
Format: Article
Language:English
Published: MDPI AG 2024-10-01
Series:Crystals
Subjects:
AlGaN on Si
silicon-based photodetectors
UV detectors
buffer optimization
Online Access:https://www.mdpi.com/2073-4352/14/11/952
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