Controlling the Crystallinity and Morphology of Bismuth Selenide via Electrochemical Exfoliation for Tailored Reverse Saturable Absorption and Optical Limiting
As an emerging two-dimensional (2D) Group-VA material, bismuth selenide (Bi<sub>2</sub>Se<sub>3</sub>) exhibits favorable electrical and optical properties. Here, three distinct morphologies of Bi<sub>2</sub>Se<sub>3</sub> were obtained from bulk Bi<...
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2024-12-01
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| author | Hao Yan Bingxue Li Junjie Pan Xuan Fang Yongji Yu Dengkui Wang Dan Fang Yanyan Zhan Xiaohua Wang Jinhua Li Xiaohui Ma Guangyong Jin |
| author_facet | Hao Yan Bingxue Li Junjie Pan Xuan Fang Yongji Yu Dengkui Wang Dan Fang Yanyan Zhan Xiaohua Wang Jinhua Li Xiaohui Ma Guangyong Jin |
| author_sort | Hao Yan |
| collection | DOAJ |
| description | As an emerging two-dimensional (2D) Group-VA material, bismuth selenide (Bi<sub>2</sub>Se<sub>3</sub>) exhibits favorable electrical and optical properties. Here, three distinct morphologies of Bi<sub>2</sub>Se<sub>3</sub> were obtained from bulk Bi<sub>2</sub>Se<sub>3</sub> through electrochemical intercalation exfoliation. And the morphologies of these nanostructures can be tuned by adjusting solvent polarity during exfoliation. Then, the nonlinear optical and absorption characteristics of the Bi<sub>2</sub>Se<sub>3</sub> samples with different morphologies were investigated using open-aperture Z-scan technology. The results reveal that the particle structure of Bi<sub>2</sub>Se<sub>3</sub> exhibits stronger reverse saturable absorption (RSA) than the sheet-like structure. This is attributed to the higher degree of oxidation and greater number of localized defect states in the particle structure than in the sheet-like structure. Electrons in these defect states can be excited to higher energy levels, thereby triggering excited-state and two-photon absorption, which strengthen RSA. Finally, with increasing the RSA, the optical limiting threshold of 2D Bi<sub>2</sub>Se<sub>3</sub> can also be increased. This work expands the potential applications of 2D Bi<sub>2</sub>Se<sub>3</sub> materials in the field of broadband nonlinear photonics. |
| format | Article |
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| institution | Kabale University |
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| language | English |
| publishDate | 2024-12-01 |
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| series | Nanomaterials |
| spelling | doaj-art-afc4acb078a44229b2e817d096c51a1a2025-01-10T13:19:22ZengMDPI AGNanomaterials2079-49912024-12-011515210.3390/nano15010052Controlling the Crystallinity and Morphology of Bismuth Selenide via Electrochemical Exfoliation for Tailored Reverse Saturable Absorption and Optical LimitingHao Yan0Bingxue Li1Junjie Pan2Xuan Fang3Yongji Yu4Dengkui Wang5Dan Fang6Yanyan Zhan7Xiaohua Wang8Jinhua Li9Xiaohui Ma10Guangyong Jin11State Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, ChinaState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, ChinaState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, ChinaState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, ChinaState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, ChinaState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, ChinaState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, ChinaState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, ChinaState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, ChinaState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, ChinaState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, ChinaState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology, Changchun 130022, ChinaAs an emerging two-dimensional (2D) Group-VA material, bismuth selenide (Bi<sub>2</sub>Se<sub>3</sub>) exhibits favorable electrical and optical properties. Here, three distinct morphologies of Bi<sub>2</sub>Se<sub>3</sub> were obtained from bulk Bi<sub>2</sub>Se<sub>3</sub> through electrochemical intercalation exfoliation. And the morphologies of these nanostructures can be tuned by adjusting solvent polarity during exfoliation. Then, the nonlinear optical and absorption characteristics of the Bi<sub>2</sub>Se<sub>3</sub> samples with different morphologies were investigated using open-aperture Z-scan technology. The results reveal that the particle structure of Bi<sub>2</sub>Se<sub>3</sub> exhibits stronger reverse saturable absorption (RSA) than the sheet-like structure. This is attributed to the higher degree of oxidation and greater number of localized defect states in the particle structure than in the sheet-like structure. Electrons in these defect states can be excited to higher energy levels, thereby triggering excited-state and two-photon absorption, which strengthen RSA. Finally, with increasing the RSA, the optical limiting threshold of 2D Bi<sub>2</sub>Se<sub>3</sub> can also be increased. This work expands the potential applications of 2D Bi<sub>2</sub>Se<sub>3</sub> materials in the field of broadband nonlinear photonics.https://www.mdpi.com/2079-4991/15/1/52Bi<sub>2</sub>Se<sub>3</sub>electrochemistrynonlinear optical absorptionreverse saturable absorptionOA Z-scan technique |
| spellingShingle | Hao Yan Bingxue Li Junjie Pan Xuan Fang Yongji Yu Dengkui Wang Dan Fang Yanyan Zhan Xiaohua Wang Jinhua Li Xiaohui Ma Guangyong Jin Controlling the Crystallinity and Morphology of Bismuth Selenide via Electrochemical Exfoliation for Tailored Reverse Saturable Absorption and Optical Limiting Nanomaterials Bi<sub>2</sub>Se<sub>3</sub> electrochemistry nonlinear optical absorption reverse saturable absorption OA Z-scan technique |
| title | Controlling the Crystallinity and Morphology of Bismuth Selenide via Electrochemical Exfoliation for Tailored Reverse Saturable Absorption and Optical Limiting |
| title_full | Controlling the Crystallinity and Morphology of Bismuth Selenide via Electrochemical Exfoliation for Tailored Reverse Saturable Absorption and Optical Limiting |
| title_fullStr | Controlling the Crystallinity and Morphology of Bismuth Selenide via Electrochemical Exfoliation for Tailored Reverse Saturable Absorption and Optical Limiting |
| title_full_unstemmed | Controlling the Crystallinity and Morphology of Bismuth Selenide via Electrochemical Exfoliation for Tailored Reverse Saturable Absorption and Optical Limiting |
| title_short | Controlling the Crystallinity and Morphology of Bismuth Selenide via Electrochemical Exfoliation for Tailored Reverse Saturable Absorption and Optical Limiting |
| title_sort | controlling the crystallinity and morphology of bismuth selenide via electrochemical exfoliation for tailored reverse saturable absorption and optical limiting |
| topic | Bi<sub>2</sub>Se<sub>3</sub> electrochemistry nonlinear optical absorption reverse saturable absorption OA Z-scan technique |
| url | https://www.mdpi.com/2079-4991/15/1/52 |
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