Controlling the Crystallinity and Morphology of Bismuth Selenide via Electrochemical Exfoliation for Tailored Reverse Saturable Absorption and Optical Limiting

As an emerging two-dimensional (2D) Group-VA material, bismuth selenide (Bi<sub>2</sub>Se<sub>3</sub>) exhibits favorable electrical and optical properties. Here, three distinct morphologies of Bi<sub>2</sub>Se<sub>3</sub> were obtained from bulk Bi<...

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Bibliographic Details
Main Authors: Hao Yan, Bingxue Li, Junjie Pan, Xuan Fang, Yongji Yu, Dengkui Wang, Dan Fang, Yanyan Zhan, Xiaohua Wang, Jinhua Li, Xiaohui Ma, Guangyong Jin
Format: Article
Language:English
Published: MDPI AG 2024-12-01
Series:Nanomaterials
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Online Access:https://www.mdpi.com/2079-4991/15/1/52
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Summary:As an emerging two-dimensional (2D) Group-VA material, bismuth selenide (Bi<sub>2</sub>Se<sub>3</sub>) exhibits favorable electrical and optical properties. Here, three distinct morphologies of Bi<sub>2</sub>Se<sub>3</sub> were obtained from bulk Bi<sub>2</sub>Se<sub>3</sub> through electrochemical intercalation exfoliation. And the morphologies of these nanostructures can be tuned by adjusting solvent polarity during exfoliation. Then, the nonlinear optical and absorption characteristics of the Bi<sub>2</sub>Se<sub>3</sub> samples with different morphologies were investigated using open-aperture Z-scan technology. The results reveal that the particle structure of Bi<sub>2</sub>Se<sub>3</sub> exhibits stronger reverse saturable absorption (RSA) than the sheet-like structure. This is attributed to the higher degree of oxidation and greater number of localized defect states in the particle structure than in the sheet-like structure. Electrons in these defect states can be excited to higher energy levels, thereby triggering excited-state and two-photon absorption, which strengthen RSA. Finally, with increasing the RSA, the optical limiting threshold of 2D Bi<sub>2</sub>Se<sub>3</sub> can also be increased. This work expands the potential applications of 2D Bi<sub>2</sub>Se<sub>3</sub> materials in the field of broadband nonlinear photonics.
ISSN:2079-4991