Numerical simulation of the tunnel effect in the gallium nitride heterostructure on silicon
In this study, a numerical simulation of the tunnel effect in the n-GaN/p-Si heterostructure has been performed. Variations of band diagrams, current-voltage characteristics and cutoff frequencies of the diode heterostructures under study were obtained depending on the doping levels of GaN and Si. T...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Peter the Great St.Petersburg Polytechnic University
2024-09-01
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| Series: | St. Petersburg Polytechnical University Journal: Physics and Mathematics |
| Subjects: | |
| Online Access: | https://physmath.spbstu.ru/article/2024.74.05/ |
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