A simple phenomenological account for the metal-induced crystallization of amorphous Ge and Si films
Abstract When combined with certain metal species, films of amorphous Ge or Si can have their typical crystallization temperatures decreased, by a factor of three or four, down to ~ 200 °C. The phenomenon is called metal-induced crystallization (MIC) and, since its first observation in the late 1960...
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2024-12-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-024-81981-z |
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