Next generation High-Mobility 2D chalcogenides TFT for display backplane
The evolution of display backplane technologies has been driven by the relentless pursuit of higher form factor and superior performance coupled with lower power consumption. Current state-of-the-art backplane technologies based on amorphous Si, poly Si, and IGZO, face challenges in meeting the requ...
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| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | International Journal of Extreme Manufacturing |
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| Online Access: | https://doi.org/10.1088/2631-7990/add4d1 |
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| author | Prashant Bisht Junoh Shim Jooon Oh Jieun Lee Hoseong Shin Hyeonho Jeong Jimin Kim Junho Lee Hyuk-Jun Kwon Sunkook Kim |
| author_facet | Prashant Bisht Junoh Shim Jooon Oh Jieun Lee Hoseong Shin Hyeonho Jeong Jimin Kim Junho Lee Hyuk-Jun Kwon Sunkook Kim |
| author_sort | Prashant Bisht |
| collection | DOAJ |
| description | The evolution of display backplane technologies has been driven by the relentless pursuit of higher form factor and superior performance coupled with lower power consumption. Current state-of-the-art backplane technologies based on amorphous Si, poly Si, and IGZO, face challenges in meeting the requirements of next-generation displays, including larger dimensions, higher refresh rates, increased pixel density, greater brightness, and reduced power consumption. In this context, 2D chalcogenides have emerged as promising candidates for thin-film transistors (TFTs) in display backplanes, offering advantages such as high mobility, low leakage current, mechanical robustness, and transparency. This comprehensive review explores the significance of 2D chalcogenides as materials for TFTs in next-generation display backplanes. We delve into the structural characteristics, electronic properties, and synthesis methods of 2D chalcogenides, emphasizing scalable growth strategies that are relevant to large-area display backplanes. Additionally, we discuss mechanical flexibility and strain engineering, crucial for the development of flexible displays. Performance enhancement strategies for 2D chalcogenide TFTs have been explored encompassing techniques in device engineering and geometry optimization, while considering scaling over a large area. Active-matrix implementation of 2D TFTs in various applications is also explored, benchmarking device performance on a large scale which is a necessary aspect of TFTs used in display backplanes. Furthermore, the latest development on the integration of 2D chalcogenide TFTs with different display technologies, such as OLED, quantum dot, and MicroLED displays has been reviewed in detail. Finally, challenges and opportunities in the field are discussed with a brief insight into emerging trends and research directions. |
| format | Article |
| id | doaj-art-ae4d77a1cadb44f1a6d3f9eeab5e95df |
| institution | DOAJ |
| issn | 2631-7990 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | International Journal of Extreme Manufacturing |
| spelling | doaj-art-ae4d77a1cadb44f1a6d3f9eeab5e95df2025-08-20T03:20:10ZengIOP PublishingInternational Journal of Extreme Manufacturing2631-79902025-01-017505200510.1088/2631-7990/add4d1Next generation High-Mobility 2D chalcogenides TFT for display backplanePrashant Bisht0Junoh Shim1Jooon Oh2Jieun Lee3Hoseong Shin4Hyeonho Jeong5Jimin Kim6Junho Lee7Hyuk-Jun Kwon8Sunkook Kim9https://orcid.org/0000-0003-1747-4539School of Advanced Materials Science and Engineering, Sungkyunkwan University , Suwon 16419, Republic of KoreaSchool of Advanced Materials Science and Engineering, Sungkyunkwan University , Suwon 16419, Republic of KoreaSchool of Advanced Materials Science and Engineering, Sungkyunkwan University , Suwon 16419, Republic of KoreaDepartment of Electrical Engineering and Computer Science, DGIST , Daegu 42988, Republic of KoreaSchool of Advanced Materials Science and Engineering, Sungkyunkwan University , Suwon 16419, Republic of KoreaSchool of Advanced Materials Science and Engineering, Sungkyunkwan University , Suwon 16419, Republic of KoreaSchool of Advanced Materials Science and Engineering, Sungkyunkwan University , Suwon 16419, Republic of KoreaSchool of Advanced Materials Science and Engineering, Sungkyunkwan University , Suwon 16419, Republic of KoreaDepartment of Electrical Engineering and Computer Science, DGIST , Daegu 42988, Republic of Korea; Convergence Research Advanced Centre for Olfaction, DGIST , Daegu 42988, Republic of KoreaSchool of Advanced Materials Science and Engineering, Sungkyunkwan University , Suwon 16419, Republic of KoreaThe evolution of display backplane technologies has been driven by the relentless pursuit of higher form factor and superior performance coupled with lower power consumption. Current state-of-the-art backplane technologies based on amorphous Si, poly Si, and IGZO, face challenges in meeting the requirements of next-generation displays, including larger dimensions, higher refresh rates, increased pixel density, greater brightness, and reduced power consumption. In this context, 2D chalcogenides have emerged as promising candidates for thin-film transistors (TFTs) in display backplanes, offering advantages such as high mobility, low leakage current, mechanical robustness, and transparency. This comprehensive review explores the significance of 2D chalcogenides as materials for TFTs in next-generation display backplanes. We delve into the structural characteristics, electronic properties, and synthesis methods of 2D chalcogenides, emphasizing scalable growth strategies that are relevant to large-area display backplanes. Additionally, we discuss mechanical flexibility and strain engineering, crucial for the development of flexible displays. Performance enhancement strategies for 2D chalcogenide TFTs have been explored encompassing techniques in device engineering and geometry optimization, while considering scaling over a large area. Active-matrix implementation of 2D TFTs in various applications is also explored, benchmarking device performance on a large scale which is a necessary aspect of TFTs used in display backplanes. Furthermore, the latest development on the integration of 2D chalcogenide TFTs with different display technologies, such as OLED, quantum dot, and MicroLED displays has been reviewed in detail. Finally, challenges and opportunities in the field are discussed with a brief insight into emerging trends and research directions.https://doi.org/10.1088/2631-7990/add4d1thin film transistorsdisplay backplaneactive-matrixOLEDmicro-LEDmobility |
| spellingShingle | Prashant Bisht Junoh Shim Jooon Oh Jieun Lee Hoseong Shin Hyeonho Jeong Jimin Kim Junho Lee Hyuk-Jun Kwon Sunkook Kim Next generation High-Mobility 2D chalcogenides TFT for display backplane International Journal of Extreme Manufacturing thin film transistors display backplane active-matrix OLED micro-LED mobility |
| title | Next generation High-Mobility 2D chalcogenides TFT for display backplane |
| title_full | Next generation High-Mobility 2D chalcogenides TFT for display backplane |
| title_fullStr | Next generation High-Mobility 2D chalcogenides TFT for display backplane |
| title_full_unstemmed | Next generation High-Mobility 2D chalcogenides TFT for display backplane |
| title_short | Next generation High-Mobility 2D chalcogenides TFT for display backplane |
| title_sort | next generation high mobility 2d chalcogenides tft for display backplane |
| topic | thin film transistors display backplane active-matrix OLED micro-LED mobility |
| url | https://doi.org/10.1088/2631-7990/add4d1 |
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