Optimum Analytical Model for the Drift Region of Silicon Carbide Uni-polar Power Device
Currently，doping concentration uniformity of epi-wafers is poor and thickness of epi-layer is sensitive to cost and defect density. An optimum analytical model for the drift region of uni-polar silicon carbide (SiC) power device and an optimum control line were developed based on the optimum target...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2015-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2015.06.008 |
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