Review of Short-Wavelength Infrared Flip-Chip Bump Bonding Process Technology
Short-wave infrared (SWIR) imaging has a wide range of applications in civil and military fields. Over the past two decades, significant efforts have been devoted to developing high-resolution, high-sensitivity, and cost-effective SWIR sensors covering the spectral range from 0.9 μm to 3 μm. These a...
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2025-01-01
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author | Junhao Du Xuewei Zhao Jiale Su Ben Li Xiangliang Duan Tianyu Dong Hongxiao Lin Yuhui Ren Yuanhao Miao Henry H. Radamson |
author_facet | Junhao Du Xuewei Zhao Jiale Su Ben Li Xiangliang Duan Tianyu Dong Hongxiao Lin Yuhui Ren Yuanhao Miao Henry H. Radamson |
author_sort | Junhao Du |
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description | Short-wave infrared (SWIR) imaging has a wide range of applications in civil and military fields. Over the past two decades, significant efforts have been devoted to developing high-resolution, high-sensitivity, and cost-effective SWIR sensors covering the spectral range from 0.9 μm to 3 μm. These advancements stimulate new prospects across a wide array of fields including life sciences, medical diagnostics, defense, surveillance, security, free-space optics (FSO), thermography, agriculture, food inspection, and LiDAR applications. In this review, we begin by introducing monolithic SWIR image sensors and hybrid SWIR image sensors and indicate that flip-chip bump bonding technology remains the predominant integration method for hybrid SWIR image sensors owing to its outstanding performance, adaptable integration with innovative epitaxial SWIR materials, long-term stability, and long-term reliability. Subsequently, we comprehensively summarize recent advancements in epitaxial thin-film SWIR sensors, encompassing FPAs and flip-chip bump bonding technology for epitaxial InGaAs and Ge (Sn) thin-film SWIR sensors. Finally, a summary and outlook regarding the development of InGaAs and Ge (Sn) SWIR sensors are provided and discussed. The ongoing evolution of epitaxial thin-film SWIR sensors with flip-chip bump bonding technology is poised to foster new applications in both academic and industry fields. |
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institution | Kabale University |
issn | 1424-8220 |
language | English |
publishDate | 2025-01-01 |
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spelling | doaj-art-ab77129c1a1f40e3abef2ba5bd3a85572025-01-10T13:21:24ZengMDPI AGSensors1424-82202025-01-0125126310.3390/s25010263Review of Short-Wavelength Infrared Flip-Chip Bump Bonding Process TechnologyJunhao Du0Xuewei Zhao1Jiale Su2Ben Li3Xiangliang Duan4Tianyu Dong5Hongxiao Lin6Yuhui Ren7Yuanhao Miao8Henry H. Radamson9Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, ChinaResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, ChinaResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, ChinaResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, ChinaResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, ChinaResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, ChinaResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, ChinaResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, ChinaResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, ChinaResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, ChinaShort-wave infrared (SWIR) imaging has a wide range of applications in civil and military fields. Over the past two decades, significant efforts have been devoted to developing high-resolution, high-sensitivity, and cost-effective SWIR sensors covering the spectral range from 0.9 μm to 3 μm. These advancements stimulate new prospects across a wide array of fields including life sciences, medical diagnostics, defense, surveillance, security, free-space optics (FSO), thermography, agriculture, food inspection, and LiDAR applications. In this review, we begin by introducing monolithic SWIR image sensors and hybrid SWIR image sensors and indicate that flip-chip bump bonding technology remains the predominant integration method for hybrid SWIR image sensors owing to its outstanding performance, adaptable integration with innovative epitaxial SWIR materials, long-term stability, and long-term reliability. Subsequently, we comprehensively summarize recent advancements in epitaxial thin-film SWIR sensors, encompassing FPAs and flip-chip bump bonding technology for epitaxial InGaAs and Ge (Sn) thin-film SWIR sensors. Finally, a summary and outlook regarding the development of InGaAs and Ge (Sn) SWIR sensors are provided and discussed. The ongoing evolution of epitaxial thin-film SWIR sensors with flip-chip bump bonding technology is poised to foster new applications in both academic and industry fields.https://www.mdpi.com/1424-8220/25/1/263GeInGaAsSWIRflip chipFPAs |
spellingShingle | Junhao Du Xuewei Zhao Jiale Su Ben Li Xiangliang Duan Tianyu Dong Hongxiao Lin Yuhui Ren Yuanhao Miao Henry H. Radamson Review of Short-Wavelength Infrared Flip-Chip Bump Bonding Process Technology Sensors Ge InGaAs SWIR flip chip FPAs |
title | Review of Short-Wavelength Infrared Flip-Chip Bump Bonding Process Technology |
title_full | Review of Short-Wavelength Infrared Flip-Chip Bump Bonding Process Technology |
title_fullStr | Review of Short-Wavelength Infrared Flip-Chip Bump Bonding Process Technology |
title_full_unstemmed | Review of Short-Wavelength Infrared Flip-Chip Bump Bonding Process Technology |
title_short | Review of Short-Wavelength Infrared Flip-Chip Bump Bonding Process Technology |
title_sort | review of short wavelength infrared flip chip bump bonding process technology |
topic | Ge InGaAs SWIR flip chip FPAs |
url | https://www.mdpi.com/1424-8220/25/1/263 |
work_keys_str_mv | AT junhaodu reviewofshortwavelengthinfraredflipchipbumpbondingprocesstechnology AT xueweizhao reviewofshortwavelengthinfraredflipchipbumpbondingprocesstechnology AT jialesu reviewofshortwavelengthinfraredflipchipbumpbondingprocesstechnology AT benli reviewofshortwavelengthinfraredflipchipbumpbondingprocesstechnology AT xiangliangduan reviewofshortwavelengthinfraredflipchipbumpbondingprocesstechnology AT tianyudong reviewofshortwavelengthinfraredflipchipbumpbondingprocesstechnology AT hongxiaolin reviewofshortwavelengthinfraredflipchipbumpbondingprocesstechnology AT yuhuiren reviewofshortwavelengthinfraredflipchipbumpbondingprocesstechnology AT yuanhaomiao reviewofshortwavelengthinfraredflipchipbumpbondingprocesstechnology AT henryhradamson reviewofshortwavelengthinfraredflipchipbumpbondingprocesstechnology |