The research of process of CdTe passivation coverings formation on epitaxial layers CdхHg1-хTe for creation of IRphotodetectors.
The features of formation passivation coverings of cadmium telluride on epitaxial layers CdхНg1-хТе used for manufacturing of matrix photodetectors of the IR-range are investigated. The laws of process of passivation coverings creation by a method of «the hot wall » are established at unitary and re...
Saved in:
| Main Authors: | V. V. Arbenina, T. V. Danilova, A. S. Kashuba, E. V. Permikina |
|---|---|
| Format: | Article |
| Language: | Russian |
| Published: |
MIREA - Russian Technological University
2007-10-01
|
| Series: | Тонкие химические технологии |
| Online Access: | https://www.finechem-mirea.ru/jour/article/view/1343 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Electrical and photoelectric properties of heterostructures NiO/p-CdTe and NiO/n-CdTe
by: Г. П. Пархоменко, et al.
Published: (2016-10-01) -
Effect the Thickness on the Electrical Properties and (I-V) Character of the (CdTe) Thin Films and Find the Efficiency of Solar Cell CdTe/CdS
by: Baghdad Science Journal
Published: (2018-06-01) -
CdTe Based X/γ-ray Detector with MoOx Contacts
by: O.L. Maslyanchuk, et al.
Published: (2017-06-01) -
Time-Controlled Synthesis of CdTe Quantum Dots for Tunable Photoluminescence
by: Adkhamjon I. Zokirov, et al.
Published: (2025-06-01) -
Study of CdTe detector response functions using different MCNPX computational modeling detailing
by: A. M. Antunes, et al.
Published: (2024-11-01)