Simplifying High-Density Memory: Exploiting Self-Rectifying Resistive Memory with TiO2/HfO2 Bilayer Devices
Self-rectifying resistive memory can reduce the complexity of crossbar array architecture for high density memory. It can replace integrated memory and selector with one self-rectifying cell. Such a simple structure can be applied for the vertical resistive memory. Both top and bottom interface betw...
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| Format: | Article |
| Language: | English |
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Polish Academy of Sciences
2024-06-01
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| Series: | Archives of Metallurgy and Materials |
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| Online Access: | https://journals.pan.pl/Content/131844/AMM-2024-2-15-Byung%20Joon%20Choi.pdf |
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| author | Min Gyoo Cho Jae Hee Go Byung Joon Choi |
| author_facet | Min Gyoo Cho Jae Hee Go Byung Joon Choi |
| author_sort | Min Gyoo Cho |
| collection | DOAJ |
| description | Self-rectifying resistive memory can reduce the complexity of crossbar array architecture for high density memory. It can replace integrated memory and selector with one self-rectifying cell. Such a simple structure can be applied for the vertical resistive memory. Both top and bottom interface between insulating layer and electrodes are crucial to achieve highly self-rectifying memory cell. In this study, bilayer devices composed of HfO2 and TiO2 were fabricated using atomic layer deposition (ALD) for the implementation of self-rectifying memory cells. The physical, chemical, and electrical properties of HfO2/TiO2 and TiO2/HfO2 sandwiched between Pt and TiN electrodes were investigated. By analyzing the conduction mechanism of bilayer devices, the higher rectification ratio of TiO2/HfO2 stack was due to the difference in height and the number of energy barriers. |
| format | Article |
| id | doaj-art-a9cbd9fe4e204f45bc940193ed7d6656 |
| institution | Kabale University |
| issn | 2300-1909 |
| language | English |
| publishDate | 2024-06-01 |
| publisher | Polish Academy of Sciences |
| record_format | Article |
| series | Archives of Metallurgy and Materials |
| spelling | doaj-art-a9cbd9fe4e204f45bc940193ed7d66562024-12-27T14:07:46ZengPolish Academy of SciencesArchives of Metallurgy and Materials2300-19092024-06-01vol. 69No 2463466https://doi.org/10.24425/amm.2024.149767Simplifying High-Density Memory: Exploiting Self-Rectifying Resistive Memory with TiO2/HfO2 Bilayer DevicesMin Gyoo Cho0https://orcid.org/0009-0003-3742-0164Jae Hee Go1Byung Joon Choi2https://orcid.org/0000-0003-1920-8162Seoul National University of Science and Technology, Department of Materials Science and Engineering, Seoul 01811, KoreaSeoul National University of Science and Technology, Department of Materials Science and Engineering, Seoul 01811, KoreaSeoul National University of Science and Technology, Department of Materials Science and Engineering, Seoul 01811, KoreaSelf-rectifying resistive memory can reduce the complexity of crossbar array architecture for high density memory. It can replace integrated memory and selector with one self-rectifying cell. Such a simple structure can be applied for the vertical resistive memory. Both top and bottom interface between insulating layer and electrodes are crucial to achieve highly self-rectifying memory cell. In this study, bilayer devices composed of HfO2 and TiO2 were fabricated using atomic layer deposition (ALD) for the implementation of self-rectifying memory cells. The physical, chemical, and electrical properties of HfO2/TiO2 and TiO2/HfO2 sandwiched between Pt and TiN electrodes were investigated. By analyzing the conduction mechanism of bilayer devices, the higher rectification ratio of TiO2/HfO2 stack was due to the difference in height and the number of energy barriers.https://journals.pan.pl/Content/131844/AMM-2024-2-15-Byung%20Joon%20Choi.pdfatomic layer depositionbilayerself-rectifying memoryrectification ratio |
| spellingShingle | Min Gyoo Cho Jae Hee Go Byung Joon Choi Simplifying High-Density Memory: Exploiting Self-Rectifying Resistive Memory with TiO2/HfO2 Bilayer Devices Archives of Metallurgy and Materials atomic layer deposition bilayer self-rectifying memory rectification ratio |
| title | Simplifying High-Density Memory: Exploiting Self-Rectifying Resistive Memory with TiO2/HfO2 Bilayer Devices |
| title_full | Simplifying High-Density Memory: Exploiting Self-Rectifying Resistive Memory with TiO2/HfO2 Bilayer Devices |
| title_fullStr | Simplifying High-Density Memory: Exploiting Self-Rectifying Resistive Memory with TiO2/HfO2 Bilayer Devices |
| title_full_unstemmed | Simplifying High-Density Memory: Exploiting Self-Rectifying Resistive Memory with TiO2/HfO2 Bilayer Devices |
| title_short | Simplifying High-Density Memory: Exploiting Self-Rectifying Resistive Memory with TiO2/HfO2 Bilayer Devices |
| title_sort | simplifying high density memory exploiting self rectifying resistive memory with tio2 hfo2 bilayer devices |
| topic | atomic layer deposition bilayer self-rectifying memory rectification ratio |
| url | https://journals.pan.pl/Content/131844/AMM-2024-2-15-Byung%20Joon%20Choi.pdf |
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