Pulsed laser deposition OF III-V semiconductor thin films: review
This review highlights the latest advancements in pulsed laser deposition of III-V semiconductor thin films on various substrates. The pulsed laser deposition method is shown to be highly effective and distinct from other thin film deposition techniques due to its discrete nature. Epitaxial growth o...
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| Format: | Article |
| Language: | Russian |
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Tver State University
2024-12-01
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| Series: | Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов |
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| Online Access: | https://physchemaspects.ru/2024/doi-10-26456-pcascnn-2024-16-621/?lang=en |
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| _version_ | 1846101791035359232 |
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| author | O.V. Devitsky |
| author_facet | O.V. Devitsky |
| author_sort | O.V. Devitsky |
| collection | DOAJ |
| description | This review highlights the latest advancements in pulsed laser deposition of III-V semiconductor thin films on various substrates. The pulsed laser deposition method is shown to be highly effective and distinct from other thin film deposition techniques due to its discrete nature. Epitaxial growth of III-V thin films is crucial for developing new optoelectronic devices. The review presents experimental data on how various pulsed laser deposition parameters affect the structural, optical, and electrical properties as well as the stoichiometry of binary and multicomponent III-V thin films. It is demonstrated that achieving the highest structural quality in III-V thin films requires using femtosecond and nanosecond lasers with wavelengths ranging from 248 nm to 532 nm, a pulse energy density of no more than 3 J/cm², and substrate temperatures between 300 and 400°C. Additionally, the target material should be monolithic and have the highest possible density. |
| format | Article |
| id | doaj-art-a9b3fe02f1634a1c95c2ac1d5e356eef |
| institution | Kabale University |
| issn | 2226-4442 2658-4360 |
| language | Russian |
| publishDate | 2024-12-01 |
| publisher | Tver State University |
| record_format | Article |
| series | Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов |
| spelling | doaj-art-a9b3fe02f1634a1c95c2ac1d5e356eef2024-12-28T15:10:57ZrusTver State UniversityФизико-химические аспекты изучения кластеров, наноструктур и наноматериалов2226-44422658-43602024-12-011662163010.26456/pcascnn/2024.16.621Pulsed laser deposition OF III-V semiconductor thin films: reviewO.V. Devitsky0Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, North Caucasus Federal UniversityThis review highlights the latest advancements in pulsed laser deposition of III-V semiconductor thin films on various substrates. The pulsed laser deposition method is shown to be highly effective and distinct from other thin film deposition techniques due to its discrete nature. Epitaxial growth of III-V thin films is crucial for developing new optoelectronic devices. The review presents experimental data on how various pulsed laser deposition parameters affect the structural, optical, and electrical properties as well as the stoichiometry of binary and multicomponent III-V thin films. It is demonstrated that achieving the highest structural quality in III-V thin films requires using femtosecond and nanosecond lasers with wavelengths ranging from 248 nm to 532 nm, a pulse energy density of no more than 3 J/cm², and substrate temperatures between 300 and 400°C. Additionally, the target material should be monolithic and have the highest possible density. https://physchemaspects.ru/2024/doi-10-26456-pcascnn-2024-16-621/?lang=enpulsed laser depositionthin filmsiii-v compoundssubstrate temperatureenergy densitystoichiometry |
| spellingShingle | O.V. Devitsky Pulsed laser deposition OF III-V semiconductor thin films: review Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов pulsed laser deposition thin films iii-v compounds substrate temperature energy density stoichiometry |
| title | Pulsed laser deposition OF III-V semiconductor thin films: review |
| title_full | Pulsed laser deposition OF III-V semiconductor thin films: review |
| title_fullStr | Pulsed laser deposition OF III-V semiconductor thin films: review |
| title_full_unstemmed | Pulsed laser deposition OF III-V semiconductor thin films: review |
| title_short | Pulsed laser deposition OF III-V semiconductor thin films: review |
| title_sort | pulsed laser deposition of iii v semiconductor thin films review |
| topic | pulsed laser deposition thin films iii-v compounds substrate temperature energy density stoichiometry |
| url | https://physchemaspects.ru/2024/doi-10-26456-pcascnn-2024-16-621/?lang=en |
| work_keys_str_mv | AT ovdevitsky pulsedlaserdepositionofiiivsemiconductorthinfilmsreview |