APA (7th ed.) Citation

Guo, H., Yao, J., Chen, S., Qian, C., Pan, X., Yin, K., . . . Sun, L. Enhancing Resistive Switching in AlN-Based Memristors Through Oxidative Al<sub>2</sub>O<sub>3</sub> Layer Formation: A Study on Preparation Techniques and Performance Impact. MDPI AG.

Chicago Style (17th ed.) Citation

Guo, Hongxuan, et al. Enhancing Resistive Switching in AlN-Based Memristors Through Oxidative Al<sub>2</sub>O<sub>3</sub> Layer Formation: A Study on Preparation Techniques and Performance Impact. MDPI AG.

MLA (9th ed.) Citation

Guo, Hongxuan, et al. Enhancing Resistive Switching in AlN-Based Memristors Through Oxidative Al<sub>2</sub>O<sub>3</sub> Layer Formation: A Study on Preparation Techniques and Performance Impact. MDPI AG.

Warning: These citations may not always be 100% accurate.