Resistive Switching Properties of Highly Transparent SnO2:Fe

Fe doped SnO2 transparent thin film nanostructures were grown by chemical solution deposition and its electric field induced resistive switching properties were investigated for non-volatile resistive random access memory (RRAM) applications. Simple, low temperature solution process growth of SnO2:F...

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Bibliographic Details
Main Authors: S.J. Trivedi, U.S. Joshi
Format: Article
Language:English
Published: Sumy State University 2017-02-01
Series:Журнал нано- та електронної фізики
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Online Access:http://jnep.sumdu.edu.ua/download/numbers/2017/1/articles/jnep_V9_01025.pdf
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