Resistive Switching Properties of Highly Transparent SnO2:Fe
Fe doped SnO2 transparent thin film nanostructures were grown by chemical solution deposition and its electric field induced resistive switching properties were investigated for non-volatile resistive random access memory (RRAM) applications. Simple, low temperature solution process growth of SnO2:F...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2017-02-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2017/1/articles/jnep_V9_01025.pdf |
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| Summary: | Fe doped SnO2 transparent thin film nanostructures were grown by chemical solution deposition and its electric field induced resistive switching properties were investigated for non-volatile resistive random access memory (RRAM) applications. Simple, low temperature solution process growth of SnO2:Fe thin film nanostructures was employed. Grazing incidence X-ray diffraction (GIXRD) and atomic force microscopy (AFM), respectively, confirmed a phase pure cubic growth with mono-disperse nanocrystallites of ~ 20 nm. Sharp interface with substrate and top metal electrodes were achieved. Reproducible hysteresis in the I-V curves with symmetrical resistance switching ratio of more than 4 103 at a low operating voltage of ± 1.1 V has been demonstrated. Large values of memory retention of about 5 moths; confirmed the non-volatile behaviour of the device cell consisting of Ag/SnO2:Fe/Ag planar structure. A mechanism involving the space charge limited current combined with Schottky conduction at the metal/oxide interface is proposed. A possible mechanism of the formation and rupture of conducting filament is proposed based on the Joule heating effect with external electron injection at the Ag/SnO2 interface. |
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| ISSN: | 2077-6772 |