Theoretical Study of the Kinetics Mechanism Underlying GaN Epitaxy Growth on 4H‐SiC Substrate

Theoretical Study of the Kinetics Mechanism Underlying GaN Epitaxy Growth on 4H‐SiC Substrate

Abstract Although GaN has successfully epitaxy growth on 4H‐SiC substrate, its kinetics mechanism, and how to control the morphology and polarity of epitaxial GaN have not been revealed yet. Herein, by investigating the epitaxial process of GaN growth on 4H‐SiC substrate, we found that the Si‐TH and...

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Bibliographic Details
Main Authors: Haidong Yuan, Liwei Wang, Jiangming Guo, Ruimei Yuan, Zhenhua Lin, Jincheng Zhang, Lixin Guo, Yue Hao, Jingjing Chang
Format: Article
Language:English
Published: Wiley-VCH 2025-06-01
Series:Advanced Materials Interfaces
Subjects:
configuration
epitaxy growth
GaN
morphology
polarity
Online Access:https://doi.org/10.1002/admi.202400978
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https://doi.org/10.1002/admi.202400978

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