p‐Graphene/Quantum Dot/n‐GaAs Mixed‐Dimensional Heterostructure Junction for Ultrathin Light‐Emitting‐Diodes

p‐Graphene/Quantum Dot/n‐GaAs Mixed‐Dimensional Heterostructure Junction for Ultrathin Light‐Emitting‐Diodes

Abstract 2D materials such as graphene hold significant potential for optoelectronic applications due to their unique surface properties and strong light‐matter interaction. Despite the promise, achieving high‐performance photonic devices using 2D materials alone remains challenging, and therefore,...

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Bibliographic Details
Main Authors: Quang Nhat Dang Lung, Rafael Jumar Chu, Eungbeom Yeon, Yeonhwa Kim, May Angelu Madarang, Won Jun Choi, Daehwan Jung
Format: Article
Language:English
Published: Wiley-VCH 2025-06-01
Series:Advanced Materials Interfaces
Subjects:
epitaxy growth
graphene
heterojunction
hybrid
LED
quantum dot
Online Access:https://doi.org/10.1002/admi.202401011
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https://doi.org/10.1002/admi.202401011

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