Research on Pressure-contact Technology of Power Terminals for the Design of High-integration IGBT Module
It briefly introduced the package principle of pressure-contact IGBT devices. In order to achieve high-integration of IGBT module, the effect of pressure-contact technology on its impendence characteristic, parallel application and thermal performance was studied. A design scheme of press-contact IG...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2017-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.01.008 |
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| Summary: | It briefly introduced the package principle of pressure-contact IGBT devices. In order to achieve high-integration of IGBT module, the effect of pressure-contact technology on its impendence characteristic, parallel application and thermal performance was studied. A design scheme of press-contact IGBT device with elastic main power terminals was proposed and its key technology was described. Simulation and experimental results verified the efficiency of press-contact technology in IGBT module design and engineering application. |
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| ISSN: | 2096-5427 |