APA (7th ed.) Citation

Rangasamy, G., Zhu, Z., & Wernersson, L. Source Design of Vertical III–V Nanowire Tunnel Field-Effect Transistors. IEEE.

Chicago Style (17th ed.) Citation

Rangasamy, Gautham, Zhongyunshen Zhu, and Lars-Erik Wernersson. Source Design of Vertical III–V Nanowire Tunnel Field-Effect Transistors. IEEE.

MLA (9th ed.) Citation

Rangasamy, Gautham, et al. Source Design of Vertical III–V Nanowire Tunnel Field-Effect Transistors. IEEE.