Physical Reservoir Computing Utilizing Ion‐Gating Transistors Operating in Electric Double Layer and Redox Mechanisms
Abstract The enormous energy consumption of modern machine learning technologies, such as deep learning and generative artificial intelligence, is one of the most critical concerns of the time. To solve this problem, physical reservoir computing, which uses the non‐linear dynamics exhibited by mecha...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2024-12-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400625 |
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| author | Takashi Tsuchiya Daiki Nishioka Wataru Namiki Kazuya Terabe |
| author_facet | Takashi Tsuchiya Daiki Nishioka Wataru Namiki Kazuya Terabe |
| author_sort | Takashi Tsuchiya |
| collection | DOAJ |
| description | Abstract The enormous energy consumption of modern machine learning technologies, such as deep learning and generative artificial intelligence, is one of the most critical concerns of the time. To solve this problem, physical reservoir computing, which uses the non‐linear dynamics exhibited by mechanical systems such as materials and devices as a computational resource for highly efficient information processing, has attracted much attention in recent years. In particular, ion‐gated transistors, a group of devices that control electrical conductivity using electrochemical mechanisms such as electric double layers and redox, show very high computational performance with complex and diverse output properties in contrast to their simple structures, due to the complexity of the physical and chemical processes involved. This research provides an overview of physical reservoir computing using ion‐gating transistors, focusing on the materials used, various computational tasks, and operating mechanisms. |
| format | Article |
| id | doaj-art-a23f159f141b47a5b1e02e3c9a50f8b4 |
| institution | Kabale University |
| issn | 2199-160X |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-a23f159f141b47a5b1e02e3c9a50f8b42025-01-09T11:51:13ZengWiley-VCHAdvanced Electronic Materials2199-160X2024-12-011012n/an/a10.1002/aelm.202400625Physical Reservoir Computing Utilizing Ion‐Gating Transistors Operating in Electric Double Layer and Redox MechanismsTakashi Tsuchiya0Daiki Nishioka1Wataru Namiki2Kazuya Terabe3Research Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS) 1‑1 Namiki Tsukuba Ibaraki 305‑0044 JapanResearch Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS) 1‑1 Namiki Tsukuba Ibaraki 305‑0044 JapanResearch Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS) 1‑1 Namiki Tsukuba Ibaraki 305‑0044 JapanResearch Center for Materials Nanoarchitectonics (MANA) National Institute for Materials Science (NIMS) 1‑1 Namiki Tsukuba Ibaraki 305‑0044 JapanAbstract The enormous energy consumption of modern machine learning technologies, such as deep learning and generative artificial intelligence, is one of the most critical concerns of the time. To solve this problem, physical reservoir computing, which uses the non‐linear dynamics exhibited by mechanical systems such as materials and devices as a computational resource for highly efficient information processing, has attracted much attention in recent years. In particular, ion‐gated transistors, a group of devices that control electrical conductivity using electrochemical mechanisms such as electric double layers and redox, show very high computational performance with complex and diverse output properties in contrast to their simple structures, due to the complexity of the physical and chemical processes involved. This research provides an overview of physical reservoir computing using ion‐gating transistors, focusing on the materials used, various computational tasks, and operating mechanisms.https://doi.org/10.1002/aelm.202400625ion‐gating reservoirsion‐gating transistorsreservoir computingsolid state ionics |
| spellingShingle | Takashi Tsuchiya Daiki Nishioka Wataru Namiki Kazuya Terabe Physical Reservoir Computing Utilizing Ion‐Gating Transistors Operating in Electric Double Layer and Redox Mechanisms Advanced Electronic Materials ion‐gating reservoirs ion‐gating transistors reservoir computing solid state ionics |
| title | Physical Reservoir Computing Utilizing Ion‐Gating Transistors Operating in Electric Double Layer and Redox Mechanisms |
| title_full | Physical Reservoir Computing Utilizing Ion‐Gating Transistors Operating in Electric Double Layer and Redox Mechanisms |
| title_fullStr | Physical Reservoir Computing Utilizing Ion‐Gating Transistors Operating in Electric Double Layer and Redox Mechanisms |
| title_full_unstemmed | Physical Reservoir Computing Utilizing Ion‐Gating Transistors Operating in Electric Double Layer and Redox Mechanisms |
| title_short | Physical Reservoir Computing Utilizing Ion‐Gating Transistors Operating in Electric Double Layer and Redox Mechanisms |
| title_sort | physical reservoir computing utilizing ion gating transistors operating in electric double layer and redox mechanisms |
| topic | ion‐gating reservoirs ion‐gating transistors reservoir computing solid state ionics |
| url | https://doi.org/10.1002/aelm.202400625 |
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