Deep Ultraviolet Excitation Photoluminescence Characteristics and Correlative Investigation of Al-Rich AlGaN Films on Sapphire

Deep Ultraviolet Excitation Photoluminescence Characteristics and Correlative Investigation of Al-Rich AlGaN Films on Sapphire

AlGaN is attractive for fabricating deep ultraviolet (DUV) optoelectronic and electronic devices of light-emitting diodes (LEDs), photodetectors, high-electron-mobility field-effect transistors (HEMTs), etc. We investigated the quality and optical properties of Al<sub>x</sub>Ga<sub>...

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Bibliographic Details
Main Authors: Zhe Chuan Feng, Ming Tian, Xiong Zhang, Manika Tun Nafisa, Yao Liu, Jeffrey Yiin, Benjamin Klein, Ian Ferguson
Format: Article
Language:English
Published: MDPI AG 2024-11-01
Series:Nanomaterials
Subjects:
AlGaN-GaN
high x(Al)
metal–organic chemical vapor deposition
spectroscopic ellipsometry
X-ray diffraction
Raman scattering
Online Access:https://www.mdpi.com/2079-4991/14/21/1769
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