Step‐Directed Epitaxy of Unidirectional Hexagonal Boron Nitride on Vicinal Ge(110)

Step‐Directed Epitaxy of Unidirectional Hexagonal Boron Nitride on Vicinal Ge(110)

Insulating hexagonal boron nitride (hBN) films with precisely controlled thickness are ideal dielectric components to modulate various interfaces in electronic devices. To achieve this, high‐quality hBN with controlled atomic configurations must be able to form pristine interfaces with various mater...

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Bibliographic Details
Main Authors:	Ju‐Hyun Jung, Chao Zhao, Seong‐Jun Yang, Jun‐Ho Park, Woo‐Ju Lee, Su‐Beom Song, Jonghwan Kim, Chan‐Cuk Hwang, Seung‐Hwa Baek, Feng Ding, Cheol‐Joo Kim
Format:	Article
Language:	English
Published:	Wiley-VCH 2024-12-01
Series:	Small Structures
Subjects:	chemical vapor deposition epitaxy hexagonal boron nitride hydrogen passivations single crystal van der Waals assembly
Online Access:	https://doi.org/10.1002/sstr.202400297
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