Diamond etching with near-zero micromasking
The outstanding material properties of single-crystal diamond have been the origin of the long-standing interest in its exploitation for engineering of high-performance micro- and nanosystems. Etching and patterning diamond have proven challenging due to the hardness and chemical resistance of the m...
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| Format: | Article |
| Language: | English |
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Elsevier
2024-11-01
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| Series: | Journal of Materials Research and Technology |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2238785424025390 |
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| author | Xiangbing Wang Shuangquan Fang Bo Wang Mengting Qiu Kazhihito Nishimura Nan Jiang Jian Yi |
| author_facet | Xiangbing Wang Shuangquan Fang Bo Wang Mengting Qiu Kazhihito Nishimura Nan Jiang Jian Yi |
| author_sort | Xiangbing Wang |
| collection | DOAJ |
| description | The outstanding material properties of single-crystal diamond have been the origin of the long-standing interest in its exploitation for engineering of high-performance micro- and nanosystems. Etching and patterning diamond have proven challenging due to the hardness and chemical resistance of the material. In this work, the patterned etching process of single-crystal diamond has been investigated using the inductively coupled plasma etching technique. In order to avoid the micromasking phenomenon caused by the metal mask, this paper adopts the Ar/O2–Ar/Cl2/BCl3 two-step cycle etching process and investigates the effect of the Cl2/BCl3 gas ratio on the bottom morphology of single-crystal diamond grid grooves. A theoretical explanation is provided for the use of chlorine-based gases to eliminate micromasking and achieve a smooth etching surface. Finally, an Ar/O₂-Ar/Cl₂/BCl3 cyclic etching process for patterning single-crystal diamond with near-zero micromasking has been developed. |
| format | Article |
| id | doaj-art-a001f94026bd4fe2976d9372e6b8ecec |
| institution | Kabale University |
| issn | 2238-7854 |
| language | English |
| publishDate | 2024-11-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Materials Research and Technology |
| spelling | doaj-art-a001f94026bd4fe2976d9372e6b8ecec2024-12-26T08:55:15ZengElsevierJournal of Materials Research and Technology2238-78542024-11-013365596564Diamond etching with near-zero micromaskingXiangbing Wang0Shuangquan Fang1Bo Wang2Mengting Qiu3Kazhihito Nishimura4Nan Jiang5Jian Yi6School of Mechanical Engineering, Yangzhou University, Yangzhou, 225009, China; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, ChinaSchool of Mechanical Engineering, Yangzhou University, Yangzhou, 225009, China; Corresponding author.Department of Materials Science & Engineering, Saarland University, Saarbrücken, 66123, Germany; Corresponding author.Southwest Institute of Technical Physics, Chengdu, 610041, ChinaNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, ChinaNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, ChinaNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China; Corresponding author.The outstanding material properties of single-crystal diamond have been the origin of the long-standing interest in its exploitation for engineering of high-performance micro- and nanosystems. Etching and patterning diamond have proven challenging due to the hardness and chemical resistance of the material. In this work, the patterned etching process of single-crystal diamond has been investigated using the inductively coupled plasma etching technique. In order to avoid the micromasking phenomenon caused by the metal mask, this paper adopts the Ar/O2–Ar/Cl2/BCl3 two-step cycle etching process and investigates the effect of the Cl2/BCl3 gas ratio on the bottom morphology of single-crystal diamond grid grooves. A theoretical explanation is provided for the use of chlorine-based gases to eliminate micromasking and achieve a smooth etching surface. Finally, an Ar/O₂-Ar/Cl₂/BCl3 cyclic etching process for patterning single-crystal diamond with near-zero micromasking has been developed.http://www.sciencedirect.com/science/article/pii/S2238785424025390Single-crystal diamondInductively coupled plasma etchingMicromaskingCl2/BCl3Cyclic etching process |
| spellingShingle | Xiangbing Wang Shuangquan Fang Bo Wang Mengting Qiu Kazhihito Nishimura Nan Jiang Jian Yi Diamond etching with near-zero micromasking Journal of Materials Research and Technology Single-crystal diamond Inductively coupled plasma etching Micromasking Cl2/BCl3 Cyclic etching process |
| title | Diamond etching with near-zero micromasking |
| title_full | Diamond etching with near-zero micromasking |
| title_fullStr | Diamond etching with near-zero micromasking |
| title_full_unstemmed | Diamond etching with near-zero micromasking |
| title_short | Diamond etching with near-zero micromasking |
| title_sort | diamond etching with near zero micromasking |
| topic | Single-crystal diamond Inductively coupled plasma etching Micromasking Cl2/BCl3 Cyclic etching process |
| url | http://www.sciencedirect.com/science/article/pii/S2238785424025390 |
| work_keys_str_mv | AT xiangbingwang diamondetchingwithnearzeromicromasking AT shuangquanfang diamondetchingwithnearzeromicromasking AT bowang diamondetchingwithnearzeromicromasking AT mengtingqiu diamondetchingwithnearzeromicromasking AT kazhihitonishimura diamondetchingwithnearzeromicromasking AT nanjiang diamondetchingwithnearzeromicromasking AT jianyi diamondetchingwithnearzeromicromasking |