Improved Conductivity of Low‐Temperature‐Synthesized Graphene/Cu for CMOS Backend‐of‐Line Interconnect Applications
Abstract This study proposes a synthesis strategy of high‐quality graphene films on the copper foil at a temperature of 400 °C throughout the graphene growth process without employing high‐temperature annealing. Through continuous CO2 laser pretreatment of the copper foil, the surface smoothness imp...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-03-01
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| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202400622 |
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