Investigation of the Impact of the Wafer Resistivities on Double-Side Passivated Contact Silicon Solar Cells
In this work, we investigate the impact of substrate resistivities on the performance of poly-Si based double-side passivated contact solar cells, featuring high-temperature fire-through contacts to both n-type and p-type poly-Si, where the contacts are co-fired at the same firing temperatures. Lar...
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| Format: | Article |
| Language: | English |
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TIB Open Publishing
2025-01-01
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| Series: | SiliconPV Conference Proceedings |
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| Online Access: | https://www.tib-op.org/ojs/index.php/siliconpv/article/view/1271 |
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| author | Pradeep Padhamnath Gabby De Luna Ruohan Zhong John Derek Arcebal Ajeet Rohatgi Armin G. Aberle |
| author_facet | Pradeep Padhamnath Gabby De Luna Ruohan Zhong John Derek Arcebal Ajeet Rohatgi Armin G. Aberle |
| author_sort | Pradeep Padhamnath |
| collection | DOAJ |
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In this work, we investigate the impact of substrate resistivities on the performance of poly-Si based double-side passivated contact solar cells, featuring high-temperature fire-through contacts to both n-type and p-type poly-Si, where the contacts are co-fired at the same firing temperatures. Large-area double-side passivated contact solar cells are fabricated on n-type wafers and thoroughly characterized to understand the impact of the change in Si wafer resistivity on the performance of the solar cells. The solar cells are fabricated on n-type substrates, with p+ poly-Si deposited on the planar rear side and n+ poly-Si on the textured front. The n+ poly-Si on the front side is selectively patterned to constrain it to the regions below the metal contacts. The fabricated solar cells achieve ≈ 22% efficiency on large area using high-temperature fire-through metallization. With the help of detailed characterization, we identify the losses that limit the device efficiency.
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| format | Article |
| id | doaj-art-9ef0a94e1bdf417db72c920989e83411 |
| institution | Kabale University |
| issn | 2940-2123 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | TIB Open Publishing |
| record_format | Article |
| series | SiliconPV Conference Proceedings |
| spelling | doaj-art-9ef0a94e1bdf417db72c920989e834112025-01-10T09:49:18ZengTIB Open PublishingSiliconPV Conference Proceedings2940-21232025-01-01210.52825/siliconpv.v2i.1271Investigation of the Impact of the Wafer Resistivities on Double-Side Passivated Contact Silicon Solar CellsPradeep Padhamnath0https://orcid.org/0000-0002-0251-0624Gabby De Luna1https://orcid.org/0009-0004-3078-3082Ruohan Zhong2https://orcid.org/0000-0003-3519-2252John Derek Arcebal3https://orcid.org/0009-0009-4671-8281Ajeet Rohatgi4https://orcid.org/0000-0002-1089-6459Armin G. Aberle5https://orcid.org/0000-0003-0456-2070National University of Singapore National University of SingaporeGeorgia Institute of Technology National University of Singapore Georgia Institute of TechnologyNational University of Singapore In this work, we investigate the impact of substrate resistivities on the performance of poly-Si based double-side passivated contact solar cells, featuring high-temperature fire-through contacts to both n-type and p-type poly-Si, where the contacts are co-fired at the same firing temperatures. Large-area double-side passivated contact solar cells are fabricated on n-type wafers and thoroughly characterized to understand the impact of the change in Si wafer resistivity on the performance of the solar cells. The solar cells are fabricated on n-type substrates, with p+ poly-Si deposited on the planar rear side and n+ poly-Si on the textured front. The n+ poly-Si on the front side is selectively patterned to constrain it to the regions below the metal contacts. The fabricated solar cells achieve ≈ 22% efficiency on large area using high-temperature fire-through metallization. With the help of detailed characterization, we identify the losses that limit the device efficiency. https://www.tib-op.org/ojs/index.php/siliconpv/article/view/1271Passivating ContactsPolysiliconScreen PrintingSelective ContactInkjet |
| spellingShingle | Pradeep Padhamnath Gabby De Luna Ruohan Zhong John Derek Arcebal Ajeet Rohatgi Armin G. Aberle Investigation of the Impact of the Wafer Resistivities on Double-Side Passivated Contact Silicon Solar Cells SiliconPV Conference Proceedings Passivating Contacts Polysilicon Screen Printing Selective Contact Inkjet |
| title | Investigation of the Impact of the Wafer Resistivities on Double-Side Passivated Contact Silicon Solar Cells |
| title_full | Investigation of the Impact of the Wafer Resistivities on Double-Side Passivated Contact Silicon Solar Cells |
| title_fullStr | Investigation of the Impact of the Wafer Resistivities on Double-Side Passivated Contact Silicon Solar Cells |
| title_full_unstemmed | Investigation of the Impact of the Wafer Resistivities on Double-Side Passivated Contact Silicon Solar Cells |
| title_short | Investigation of the Impact of the Wafer Resistivities on Double-Side Passivated Contact Silicon Solar Cells |
| title_sort | investigation of the impact of the wafer resistivities on double side passivated contact silicon solar cells |
| topic | Passivating Contacts Polysilicon Screen Printing Selective Contact Inkjet |
| url | https://www.tib-op.org/ojs/index.php/siliconpv/article/view/1271 |
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