Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2
Abstract Recent advances have uncovered an exotic sliding ferroelectric mechanism, which endows to design atomically thin ferroelectrics from non-ferroelectric parent monolayers. Although notable progress has been witnessed in understanding the fundamental properties, functional devices based on sli...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2024-12-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-024-55333-4 |
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| author | Xiuzhen Li Biao Qin Yaxian Wang Yue Xi Zhiheng Huang Mengze Zhao Yalin Peng Zitao Chen Zitian Pan Jundong Zhu Chenyang Cui Rong Yang Wei Yang Sheng Meng Dongxia Shi Xuedong Bai Can Liu Na Li Jianshi Tang Kaihui Liu Luojun Du Guangyu Zhang |
| author_facet | Xiuzhen Li Biao Qin Yaxian Wang Yue Xi Zhiheng Huang Mengze Zhao Yalin Peng Zitao Chen Zitian Pan Jundong Zhu Chenyang Cui Rong Yang Wei Yang Sheng Meng Dongxia Shi Xuedong Bai Can Liu Na Li Jianshi Tang Kaihui Liu Luojun Du Guangyu Zhang |
| author_sort | Xiuzhen Li |
| collection | DOAJ |
| description | Abstract Recent advances have uncovered an exotic sliding ferroelectric mechanism, which endows to design atomically thin ferroelectrics from non-ferroelectric parent monolayers. Although notable progress has been witnessed in understanding the fundamental properties, functional devices based on sliding ferroelectrics remain elusive. Here, we demonstrate the rewritable, non-volatile memories at room-temperature with a two-dimensional (2D) sliding ferroelectric semiconductor of rhombohedral-stacked bilayer MoS2. The 2D sliding ferroelectric memories (SFeMs) show superior performances with a large memory window of >8 V, a high conductance ratio of above 106, a long retention time of >10 years, and a programming endurance greater than 104 cycles. Remarkably, flexible SFeMs are achieved with state-of-the-art performances competitive to their rigid counterparts and maintain their performances post bending over 103 cycles. Furthermore, synapse-specific Hebbian forms of plasticity and image recognition with a high accuracy of 97.81% are demonstrated based on flexible SFeMs. |
| format | Article |
| id | doaj-art-9e8ed5eb026a4d8c9a8f47e241d43bf1 |
| institution | Kabale University |
| issn | 2041-1723 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-9e8ed5eb026a4d8c9a8f47e241d43bf12025-01-05T12:35:55ZengNature PortfolioNature Communications2041-17232024-12-0115111010.1038/s41467-024-55333-4Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2Xiuzhen Li0Biao Qin1Yaxian Wang2Yue Xi3Zhiheng Huang4Mengze Zhao5Yalin Peng6Zitao Chen7Zitian Pan8Jundong Zhu9Chenyang Cui10Rong Yang11Wei Yang12Sheng Meng13Dongxia Shi14Xuedong Bai15Can Liu16Na Li17Jianshi Tang18Kaihui Liu19Luojun Du20Guangyu Zhang21Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of SciencesState Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking UniversityBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of SciencesBeijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Tsinghua UniversityBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of SciencesState Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking UniversityBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of SciencesBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of SciencesBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of SciencesBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of SciencesBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of SciencesCollege of Semiconductors (College of Integrated Circuits), Hunan UniversityBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of SciencesBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of SciencesBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of SciencesBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of SciencesKey Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of ChinaBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of SciencesBeijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Tsinghua UniversityState Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking UniversityBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of SciencesBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of SciencesAbstract Recent advances have uncovered an exotic sliding ferroelectric mechanism, which endows to design atomically thin ferroelectrics from non-ferroelectric parent monolayers. Although notable progress has been witnessed in understanding the fundamental properties, functional devices based on sliding ferroelectrics remain elusive. Here, we demonstrate the rewritable, non-volatile memories at room-temperature with a two-dimensional (2D) sliding ferroelectric semiconductor of rhombohedral-stacked bilayer MoS2. The 2D sliding ferroelectric memories (SFeMs) show superior performances with a large memory window of >8 V, a high conductance ratio of above 106, a long retention time of >10 years, and a programming endurance greater than 104 cycles. Remarkably, flexible SFeMs are achieved with state-of-the-art performances competitive to their rigid counterparts and maintain their performances post bending over 103 cycles. Furthermore, synapse-specific Hebbian forms of plasticity and image recognition with a high accuracy of 97.81% are demonstrated based on flexible SFeMs.https://doi.org/10.1038/s41467-024-55333-4 |
| spellingShingle | Xiuzhen Li Biao Qin Yaxian Wang Yue Xi Zhiheng Huang Mengze Zhao Yalin Peng Zitao Chen Zitian Pan Jundong Zhu Chenyang Cui Rong Yang Wei Yang Sheng Meng Dongxia Shi Xuedong Bai Can Liu Na Li Jianshi Tang Kaihui Liu Luojun Du Guangyu Zhang Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2 Nature Communications |
| title | Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2 |
| title_full | Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2 |
| title_fullStr | Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2 |
| title_full_unstemmed | Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2 |
| title_short | Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2 |
| title_sort | sliding ferroelectric memories and synapses based on rhombohedral stacked bilayer mos2 |
| url | https://doi.org/10.1038/s41467-024-55333-4 |
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