Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures
SiC-based n-channel and p-channel MOSFETs fabricated by Fraunhofer IISB SiC CMOS technology are characterized from room temperature up to 300°C. The behaviors of these low voltage devices including the short-channel effect (SCE), p-type ohmic contact with high resistivity, and the low cha...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10769415/ |
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