Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures
SiC-based n-channel and p-channel MOSFETs fabricated by Fraunhofer IISB SiC CMOS technology are characterized from room temperature up to 300°C. The behaviors of these low voltage devices including the short-channel effect (SCE), p-type ohmic contact with high resistivity, and the low cha...
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| Format: | Article |
| Language: | English |
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IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10769415/ |
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| author | Hui Wang Pengyu Lai Affan Abbasi Md Maksudul Hossain Asif Faruque H. Alan Mantooth Zhong Chen |
| author_facet | Hui Wang Pengyu Lai Affan Abbasi Md Maksudul Hossain Asif Faruque H. Alan Mantooth Zhong Chen |
| author_sort | Hui Wang |
| collection | DOAJ |
| description | SiC-based n-channel and p-channel MOSFETs fabricated by Fraunhofer IISB SiC CMOS technology are characterized from room temperature up to 300°C. The behaviors of these low voltage devices including the short-channel effect (SCE), p-type ohmic contact with high resistivity, and the low channel mobility due to the SiC/SiO2 interface are presented. A thorough analysis is performed to understand the cause of low channel mobility, with TCAD simulations specifically on p-channel MOSFET, providing an insight into the impact of channel length, interface traps, and contact resistivity on device performance. The analysis in this paper is important in the comprehension of the low-voltage SiC MOSFETs so as to achieve balanced n-channel and p-channel MOSFETs and lead to the monolithic integration of SiC ICs with SiC power devices. |
| format | Article |
| id | doaj-art-9e54736af8a74ea58d61726370275178 |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-9e54736af8a74ea58d617263702751782025-01-14T00:00:54ZengIEEEIEEE Journal of the Electron Devices Society2168-67342025-01-0113243310.1109/JEDS.2024.350692210769415Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High TemperaturesHui Wang0https://orcid.org/0000-0002-8987-5078Pengyu Lai1https://orcid.org/0000-0001-6705-4650Affan Abbasi2https://orcid.org/0000-0002-6939-6395Md Maksudul Hossain3https://orcid.org/0000-0002-9166-8932Asif Faruque4H. Alan Mantooth5https://orcid.org/0000-0001-6447-5345Zhong Chen6https://orcid.org/0000-0001-7353-6269Department of Electrical Engineering and Computer Science, University of Arkansas, Fayetteville, AR, USADepartment of Electrical Engineering and Computer Science, University of Arkansas, Fayetteville, AR, USADepartment of Electrical Engineering and Computer Science, University of Arkansas, Fayetteville, AR, USADepartment of Electrical Engineering and Computer Science, University of Arkansas, Fayetteville, AR, USADepartment of Electrical Engineering and Computer Science, University of Arkansas, Fayetteville, AR, USADepartment of Electrical Engineering and Computer Science, University of Arkansas, Fayetteville, AR, USADepartment of Electrical Engineering and Computer Science, University of Arkansas, Fayetteville, AR, USASiC-based n-channel and p-channel MOSFETs fabricated by Fraunhofer IISB SiC CMOS technology are characterized from room temperature up to 300°C. The behaviors of these low voltage devices including the short-channel effect (SCE), p-type ohmic contact with high resistivity, and the low channel mobility due to the SiC/SiO2 interface are presented. A thorough analysis is performed to understand the cause of low channel mobility, with TCAD simulations specifically on p-channel MOSFET, providing an insight into the impact of channel length, interface traps, and contact resistivity on device performance. The analysis in this paper is important in the comprehension of the low-voltage SiC MOSFETs so as to achieve balanced n-channel and p-channel MOSFETs and lead to the monolithic integration of SiC ICs with SiC power devices.https://ieeexplore.ieee.org/document/10769415/Silicon carbideCMOShigh temperatureTCADchannel mobilitySiC/SiO₂ interface |
| spellingShingle | Hui Wang Pengyu Lai Affan Abbasi Md Maksudul Hossain Asif Faruque H. Alan Mantooth Zhong Chen Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures IEEE Journal of the Electron Devices Society Silicon carbide CMOS high temperature TCAD channel mobility SiC/SiO₂ interface |
| title | Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures |
| title_full | Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures |
| title_fullStr | Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures |
| title_full_unstemmed | Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures |
| title_short | Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures |
| title_sort | characterization of silicon carbide low voltage n p channel mosfets at high temperatures |
| topic | Silicon carbide CMOS high temperature TCAD channel mobility SiC/SiO₂ interface |
| url | https://ieeexplore.ieee.org/document/10769415/ |
| work_keys_str_mv | AT huiwang characterizationofsiliconcarbidelowvoltagenpchannelmosfetsathightemperatures AT pengyulai characterizationofsiliconcarbidelowvoltagenpchannelmosfetsathightemperatures AT affanabbasi characterizationofsiliconcarbidelowvoltagenpchannelmosfetsathightemperatures AT mdmaksudulhossain characterizationofsiliconcarbidelowvoltagenpchannelmosfetsathightemperatures AT asiffaruque characterizationofsiliconcarbidelowvoltagenpchannelmosfetsathightemperatures AT halanmantooth characterizationofsiliconcarbidelowvoltagenpchannelmosfetsathightemperatures AT zhongchen characterizationofsiliconcarbidelowvoltagenpchannelmosfetsathightemperatures |