Phase Characteristics of Models of GaAs Gyroelectric Waveguides with Temperature Sensitive Anisotropic Dielectric Layers in Case of One Layer
Models of open cylindrical multilayer gyroelectric-anisotropic-gyroelectric waveguides are presented in this paper. The influence of density of free carriers, temperature and the presence of the external dielectric layer on the wave phase characteristics of the models of n-GaAs waveguides has been e...
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| Format: | Article |
| Language: | English |
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Riga Technical University Press
2018-12-01
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| Series: | Electrical, Control and Communication Engineering |
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| Online Access: | https://doi.org/10.2478/ecce-2018-0016 |
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| author | Plonis Darius Katkevičius Andrius Belova-Plonienė Diana |
| author_facet | Plonis Darius Katkevičius Andrius Belova-Plonienė Diana |
| author_sort | Plonis Darius |
| collection | DOAJ |
| description | Models of open cylindrical multilayer gyroelectric-anisotropic-gyroelectric waveguides are presented in this paper. The influence of density of free carriers, temperature and the presence of the external dielectric layer on the wave phase characteristics of the models of n-GaAs waveguides has been evaluated. Differential Maxwell’s equations, coupled mode and partial area methods have been used to obtain complex dispersion equation of the models of gyroelectric-anisotropic-gyroelectric waveguides with or without the temperature sensitive external anisotropic dielectric layer. The analysis has shown that the phase characteristics are practically unchanged when the density of electrons is equal to N = (1017–5·1018) m−3, d/rs = 0, the changes of wave phase coefficients are obtained in the models of waveguides with the external anisotropic dielectric layer. The largest differences of wave phase coefficient are obtained when the density of electrons is N = 1021 m−3. The external dielectric layer improves the control of gyroelectric n-GaAs waveguides with temperature. |
| format | Article |
| id | doaj-art-9ddb57a424c247038a6c116d17e13a8e |
| institution | Kabale University |
| issn | 2255-9159 |
| language | English |
| publishDate | 2018-12-01 |
| publisher | Riga Technical University Press |
| record_format | Article |
| series | Electrical, Control and Communication Engineering |
| spelling | doaj-art-9ddb57a424c247038a6c116d17e13a8e2024-12-02T04:43:48ZengRiga Technical University PressElectrical, Control and Communication Engineering2255-91592018-12-0114213414010.2478/ecce-2018-0016ecce-2018-0016Phase Characteristics of Models of GaAs Gyroelectric Waveguides with Temperature Sensitive Anisotropic Dielectric Layers in Case of One LayerPlonis Darius0Katkevičius Andrius1Belova-Plonienė Diana2Associate Professor, Vilnius Gediminas Technical University, Vilnius, LithuaniaAssociate Professor, Vilnius Gediminas Technical University, Vilnius, LithuaniaSpecialist, Vilnius Gediminas Technical University, Vilnius, LithuaniaModels of open cylindrical multilayer gyroelectric-anisotropic-gyroelectric waveguides are presented in this paper. The influence of density of free carriers, temperature and the presence of the external dielectric layer on the wave phase characteristics of the models of n-GaAs waveguides has been evaluated. Differential Maxwell’s equations, coupled mode and partial area methods have been used to obtain complex dispersion equation of the models of gyroelectric-anisotropic-gyroelectric waveguides with or without the temperature sensitive external anisotropic dielectric layer. The analysis has shown that the phase characteristics are practically unchanged when the density of electrons is equal to N = (1017–5·1018) m−3, d/rs = 0, the changes of wave phase coefficients are obtained in the models of waveguides with the external anisotropic dielectric layer. The largest differences of wave phase coefficient are obtained when the density of electrons is N = 1021 m−3. The external dielectric layer improves the control of gyroelectric n-GaAs waveguides with temperature.https://doi.org/10.2478/ecce-2018-0016microwave propagationpropagation constantsemiconductor waveguides |
| spellingShingle | Plonis Darius Katkevičius Andrius Belova-Plonienė Diana Phase Characteristics of Models of GaAs Gyroelectric Waveguides with Temperature Sensitive Anisotropic Dielectric Layers in Case of One Layer Electrical, Control and Communication Engineering microwave propagation propagation constant semiconductor waveguides |
| title | Phase Characteristics of Models of GaAs Gyroelectric Waveguides with Temperature Sensitive Anisotropic Dielectric Layers in Case of One Layer |
| title_full | Phase Characteristics of Models of GaAs Gyroelectric Waveguides with Temperature Sensitive Anisotropic Dielectric Layers in Case of One Layer |
| title_fullStr | Phase Characteristics of Models of GaAs Gyroelectric Waveguides with Temperature Sensitive Anisotropic Dielectric Layers in Case of One Layer |
| title_full_unstemmed | Phase Characteristics of Models of GaAs Gyroelectric Waveguides with Temperature Sensitive Anisotropic Dielectric Layers in Case of One Layer |
| title_short | Phase Characteristics of Models of GaAs Gyroelectric Waveguides with Temperature Sensitive Anisotropic Dielectric Layers in Case of One Layer |
| title_sort | phase characteristics of models of gaas gyroelectric waveguides with temperature sensitive anisotropic dielectric layers in case of one layer |
| topic | microwave propagation propagation constant semiconductor waveguides |
| url | https://doi.org/10.2478/ecce-2018-0016 |
| work_keys_str_mv | AT plonisdarius phasecharacteristicsofmodelsofgaasgyroelectricwaveguideswithtemperaturesensitiveanisotropicdielectriclayersincaseofonelayer AT katkeviciusandrius phasecharacteristicsofmodelsofgaasgyroelectricwaveguideswithtemperaturesensitiveanisotropicdielectriclayersincaseofonelayer AT belovaplonienediana phasecharacteristicsofmodelsofgaasgyroelectricwaveguideswithtemperaturesensitiveanisotropicdielectriclayersincaseofonelayer |