p-CuGaO2/β-Ga2O3 interfaces: A high-throughput approach for interface prediction and generation for power device applications

p-CuGaO2/β-Ga2O3 interfaces: A high-throughput approach for interface prediction and generation for power device applications

This study integrates a p-type copper gallium oxide (p-CuGaO2) interlayer to enhance the performance of β-Ga2O3-based power devices, addressing challenges in achieving reliable p-type doping. The p-CuGaO2 interlayer is expected to improve breakdown voltage (BV) and reduce leakage current, increasing...

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Bibliographic Details
Main Authors: Chowdam Venkata Prasad, Jang Hyeok Park, Qui Thanh Hoai Ta, Kyong Jae Kim, Ho Jung Jeon, Muzaffar Ali Mir, Mohsin Raza, Nguyen Ngoc Tri, Honggyun Kim, Madani Labed, You Seung Rim
Format: Article
Language:English
Published: Elsevier 2025-06-01
Series:Materials Today Advances
Subjects:
p-CuGaO2
β-Ga2O3
Heterojunction
Density functional theory (DFT)
Breakdown voltage
Interface state density
Online Access:http://www.sciencedirect.com/science/article/pii/S2590049825000220
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