Simulation of the Dynamic Transistor Negatrons
The simulation principles of monolithic microwave dynamic transistor negatrons (circuits with negative differential active resistance) are introduced. The non-linear model has been developed on the basis of non-linear charge model. The equivalent circuit and Volterra series were used for the calcula...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2000-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/APEC.23.115 |
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| Summary: | The simulation principles of monolithic microwave dynamic transistor negatrons
(circuits with negative differential active resistance) are introduced. The non-linear
model has been developed on the basis of non-linear charge model. The equivalent
circuit and Volterra series were used for the calculation of dynamic negatrons'
parameters. The expressions were obtained, which give the linear relation between
current and voltage charges and allow calculating the transferring characteristics.
Experimental oscillators are described, which confirm the theoretical predictions. |
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| ISSN: | 0882-7516 1563-5031 |