Application of Silver Sintering Technology in Press-pack IGBTs

Silver sintering technology which has the characteristics of low temperature connection, low thermal resistance, low stress and high melting point, has gradually become the application trend of interface reliability-connection in insulated gate bipolar transistors(IGBT). The mechanism of silver sint...

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Bibliographic Details
Main Authors: Tingchang SHI, Han LI, Guiqin CHANG, Haihui LUO, Guozhong DONG, Guoyou LIU
Format: Article
Language:zho
Published: Editorial Department of Electric Drive for Locomotives 2021-09-01
Series:机车电传动
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Online Access:http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2021.05.020
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Summary:Silver sintering technology which has the characteristics of low temperature connection, low thermal resistance, low stress and high melting point, has gradually become the application trend of interface reliability-connection in insulated gate bipolar transistors(IGBT). The mechanism of silver sintering technology, and the structure of press-pack IGBT by silver sintering technology were introduced. Then, the thermal resistance difference between silver sintered sub-units package module and soldering sub-units package module was analyzed and compared by finite element method. Finally, voltage drop parameters, pressure uniformity, thermal resistance characteristics and long period power cycle interface reliability were verified and compared to the press-pack IGBT device by traditional soldering IGBT device.The paratical application shows that the reliability of the press-pack IGBT device with silver sintering technology has greatly improved.
ISSN:1000-128X