Purely electronic insulator-metal transition in rutile VO2

Purely electronic insulator-metal transition in rutile VO2

Abstract Volatile resistive switching in neuromorphic computing can be tuned by external stimuli such as temperature or electric-field. However, this type of switching is generally coupled to structural changes, resulting in slower reaction speed and higher energy consumption when incorporated into...

Full description

Saved in:
Bibliographic Details
Main Authors: Shaobo Cheng, Henry Navarro, Zishen Wang, Xing Li, Jasleen Kaur, Alexandre Pofelski, Qingping Meng, Chenyu Zhou, Chi Chen, Mark P. M. Dean, Mingzhao Liu, Ali C. Basaran, Marcelo Rozenberg, Shyue Ping Ong, Ivan K. Schuller, Yimei Zhu
Format: Article
Language:English
Published: Nature Portfolio 2025-07-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-025-60243-0
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://doi.org/10.1038/s41467-025-60243-0

Similar Items