Enhanced Carrier Injection Across S/D Contacts in Selenium-Based TMD FETs Using KI and Metal Induced Gap-States Engineering
Lack of transparent contacts has been a critical bottleneck for the two-dimensional Transition Metal Dichalcogenides (TMDs) Field Effect Transistors (FETs). In the absence of approaches to introduce physical doping without inducing crystal damage, charge transfer-based doping has been widely adopted...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10382467/ |
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