Capacitance and Conductance Compensation Methods for Efficient Computing‐In‐Memory Designs
Abstract Compensation has been a common while unacknowledged strategy in the design of computing‐in‐memory (CIM) schemes. It enables efficient CIM designs by intentionally letting the sum of capacitances or conductances of two or more rows or columns in the memory array equal, thus resulting in a co...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2024-12-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400452 |
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| author | Yubiao Luo Fei Qiao Zhong Sun |
| author_facet | Yubiao Luo Fei Qiao Zhong Sun |
| author_sort | Yubiao Luo |
| collection | DOAJ |
| description | Abstract Compensation has been a common while unacknowledged strategy in the design of computing‐in‐memory (CIM) schemes. It enables efficient CIM designs by intentionally letting the sum of capacitances or conductances of two or more rows or columns in the memory array equal, thus resulting in a concise mathematical formula regarding the memory cell data and the input data, which constitute computing primitives. Here, the capacitance and conductance compensation methods are reviewed that have been used for CIM designs based on static random‐access memory (SRAM) in combination with capacitors and nonvolatile resistive memory, respectively, and uncover the underlying principles and their application to CIM. It is hoped this effort will help recognize the compensation methods as a building block for CIM designs, and will be an inspiration to developing more CIM schemes that are more compact in area, more efficient in energy consumption, and capable of solving more complicated problems. |
| format | Article |
| id | doaj-art-8ce08632eb044fd89555ce186a7ec9c6 |
| institution | Kabale University |
| issn | 2199-160X |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-8ce08632eb044fd89555ce186a7ec9c62025-01-09T11:51:13ZengWiley-VCHAdvanced Electronic Materials2199-160X2024-12-011012n/an/a10.1002/aelm.202400452Capacitance and Conductance Compensation Methods for Efficient Computing‐In‐Memory DesignsYubiao Luo0Fei Qiao1Zhong Sun2School of Integrated Circuits Peking University Beijing 100871 ChinaSense Lab Department of Electronic Engineering Tsinghua University Beijing 100084 ChinaSchool of Integrated Circuits Peking University Beijing 100871 ChinaAbstract Compensation has been a common while unacknowledged strategy in the design of computing‐in‐memory (CIM) schemes. It enables efficient CIM designs by intentionally letting the sum of capacitances or conductances of two or more rows or columns in the memory array equal, thus resulting in a concise mathematical formula regarding the memory cell data and the input data, which constitute computing primitives. Here, the capacitance and conductance compensation methods are reviewed that have been used for CIM designs based on static random‐access memory (SRAM) in combination with capacitors and nonvolatile resistive memory, respectively, and uncover the underlying principles and their application to CIM. It is hoped this effort will help recognize the compensation methods as a building block for CIM designs, and will be an inspiration to developing more CIM schemes that are more compact in area, more efficient in energy consumption, and capable of solving more complicated problems.https://doi.org/10.1002/aelm.202400452capacitance compensationcomputing‐in‐memoryconductance compensationresistive memorySRAM |
| spellingShingle | Yubiao Luo Fei Qiao Zhong Sun Capacitance and Conductance Compensation Methods for Efficient Computing‐In‐Memory Designs Advanced Electronic Materials capacitance compensation computing‐in‐memory conductance compensation resistive memory SRAM |
| title | Capacitance and Conductance Compensation Methods for Efficient Computing‐In‐Memory Designs |
| title_full | Capacitance and Conductance Compensation Methods for Efficient Computing‐In‐Memory Designs |
| title_fullStr | Capacitance and Conductance Compensation Methods for Efficient Computing‐In‐Memory Designs |
| title_full_unstemmed | Capacitance and Conductance Compensation Methods for Efficient Computing‐In‐Memory Designs |
| title_short | Capacitance and Conductance Compensation Methods for Efficient Computing‐In‐Memory Designs |
| title_sort | capacitance and conductance compensation methods for efficient computing in memory designs |
| topic | capacitance compensation computing‐in‐memory conductance compensation resistive memory SRAM |
| url | https://doi.org/10.1002/aelm.202400452 |
| work_keys_str_mv | AT yubiaoluo capacitanceandconductancecompensationmethodsforefficientcomputinginmemorydesigns AT feiqiao capacitanceandconductancecompensationmethodsforefficientcomputinginmemorydesigns AT zhongsun capacitanceandconductancecompensationmethodsforefficientcomputinginmemorydesigns |