Development of 6 500 V/200 A High-voltage and High-power Localization IGBT

Development of 6 500 V/200 A High-voltage and High-power Localization IGBT

It designed and packed localization IGBT and FRD chip of CRRC. Structural optimization of IGBT was designed through ANSYS simulations of electromagnetic field, heat, stress and so on. The developed IGBT had passed the test of component level, module level, convert level and locomotive class, and sat...

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Bibliographic Details
Main Authors: CHEN Hong, YANG Chunyu, LIU Geli, WU Caisheng, CAO Lin, SUN Jun
Format: Article
Language:zho
Published: Editorial Department of Electric Drive for Locomotives 2017-01-01
Series:机车电传动
Subjects:
IGBT
power module
package
test of double pulses
optimal design
high-voltage and high-power
ANSYS simulation
Online Access:http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2017.01.001
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