In Situ Growth of (−201) Fiber‐Textured β‐Ga2O3 Semiconductor Tape for Flexible Thin‐Film Transistor
Abstract High‐temperature in situ growth of Ga2O3 thin film on flexible substrates for flexible/portable electronic devices is never realized because the conventional polymer substrates cannot meet the thermal‐stability requirements. In the research, for the first time, Ga2O3 thin films are directly...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-01-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400046 |
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| author | Xiao Tang Yue Zhao Kuang‐Hui Li Chen Liu Hendrik Faber Wedyan Babatain Che‐Hao Liao Saravanan Yuvaraja Vishal Khandelwal Dhanu Chettri Haicheng Cao Yi Lu Chuanju Wang Thomas D. Anthopoulos Xixiang Zhang Xiaohang Li |
| author_facet | Xiao Tang Yue Zhao Kuang‐Hui Li Chen Liu Hendrik Faber Wedyan Babatain Che‐Hao Liao Saravanan Yuvaraja Vishal Khandelwal Dhanu Chettri Haicheng Cao Yi Lu Chuanju Wang Thomas D. Anthopoulos Xixiang Zhang Xiaohang Li |
| author_sort | Xiao Tang |
| collection | DOAJ |
| description | Abstract High‐temperature in situ growth of Ga2O3 thin film on flexible substrates for flexible/portable electronic devices is never realized because the conventional polymer substrates cannot meet the thermal‐stability requirements. In the research, for the first time, Ga2O3 thin films are directly grown on SiOx/Al2Ox buffered Hastelloy substrates. With pulsed laser deposition under high temperature, as‐grown Ga2O3 thin films have a fabric texture with a preferred out‐of‐plane orientation along (−201) and a good field‐effect mobility of 18.07 cm2 V−1 s−1. The Ga2O3 coated tape is patterned with transistor arrays and exhibited good performance homogeneity. The representative transistor devices have a threshold voltage of ≈−2.75 V and a breakdown voltage of 116 V measured under a −20 V gate voltage. Moreover, the tape transistors also have good mechanical robustness. The transistors’ good electrical performance, high uniformity, and mechanical robustness suggest that the in situ deposition technique using Hastelloy tape is promising for fabricating various flexible Ga2O3 channeled electronic circuits. Furthermore, it is believed that this technique can be extended to other flexible semiconductor devices that require high‐temperature processing. |
| format | Article |
| id | doaj-art-8c736b4f0400403cb640020e18eb0eba |
| institution | Kabale University |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-8c736b4f0400403cb640020e18eb0eba2025-01-10T13:40:16ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-01-01111n/an/a10.1002/aelm.202400046In Situ Growth of (−201) Fiber‐Textured β‐Ga2O3 Semiconductor Tape for Flexible Thin‐Film TransistorXiao Tang0Yue Zhao1Kuang‐Hui Li2Chen Liu3Hendrik Faber4Wedyan Babatain5Che‐Hao Liao6Saravanan Yuvaraja7Vishal Khandelwal8Dhanu Chettri9Haicheng Cao10Yi Lu11Chuanju Wang12Thomas D. Anthopoulos13Xixiang Zhang14Xiaohang Li15Advanced Semiconductor Laboratory Electrical and Computer Engineering Program CEMSE Division King Abdullah University of Science and Technology (KAUST) Thuwal 23955–6900 Saudi ArabiaSchool of Electronic Information and Electrical Engineering Shanghai Jiao Tong University Shanghai 200240 ChinaAdvanced Semiconductor Laboratory Electrical and Computer Engineering Program CEMSE Division King Abdullah University of Science and Technology (KAUST) Thuwal 23955–6900 Saudi ArabiaDivision of Physical Science and Engineering (PSE) King Abdullah University of Science and Technology (KAUST) Thuwal 23955–6900 Saudi ArabiaKAUST Solar Center (KSC) King Abdullah University of Science and Technology (KAUST) Thuwal 23955–6900 Saudi ArabiaMMH Labs Electrical and Computer Engineering King Abdullah University of Science and Technology (KAUST) Thuwal 23955–6900 Saudi ArabiaAdvanced Semiconductor Laboratory Electrical and Computer Engineering Program CEMSE Division King Abdullah University of Science and Technology (KAUST) Thuwal 23955–6900 Saudi ArabiaAdvanced Semiconductor Laboratory Electrical and Computer Engineering Program CEMSE Division King Abdullah University of Science and Technology (KAUST) Thuwal 23955–6900 Saudi ArabiaAdvanced Semiconductor Laboratory Electrical and Computer Engineering Program CEMSE Division King Abdullah University of Science and Technology (KAUST) Thuwal 23955–6900 Saudi ArabiaAdvanced Semiconductor Laboratory Electrical and Computer Engineering Program CEMSE Division King Abdullah University of Science and Technology (KAUST) Thuwal 23955–6900 Saudi ArabiaAdvanced Semiconductor Laboratory Electrical and Computer Engineering Program CEMSE Division King Abdullah University of Science and Technology (KAUST) Thuwal 23955–6900 Saudi ArabiaAdvanced Semiconductor Laboratory Electrical and Computer Engineering Program CEMSE Division King Abdullah University of Science and Technology (KAUST) Thuwal 23955–6900 Saudi ArabiaAdvanced Semiconductor Laboratory Electrical and Computer Engineering Program CEMSE Division King Abdullah University of Science and Technology (KAUST) Thuwal 23955–6900 Saudi ArabiaKAUST Solar Center (KSC) King Abdullah University of Science and Technology (KAUST) Thuwal 23955–6900 Saudi ArabiaDivision of Physical Science and Engineering (PSE) King Abdullah University of Science and Technology (KAUST) Thuwal 23955–6900 Saudi ArabiaAdvanced Semiconductor Laboratory Electrical and Computer Engineering Program CEMSE Division King Abdullah University of Science and Technology (KAUST) Thuwal 23955–6900 Saudi ArabiaAbstract High‐temperature in situ growth of Ga2O3 thin film on flexible substrates for flexible/portable electronic devices is never realized because the conventional polymer substrates cannot meet the thermal‐stability requirements. In the research, for the first time, Ga2O3 thin films are directly grown on SiOx/Al2Ox buffered Hastelloy substrates. With pulsed laser deposition under high temperature, as‐grown Ga2O3 thin films have a fabric texture with a preferred out‐of‐plane orientation along (−201) and a good field‐effect mobility of 18.07 cm2 V−1 s−1. The Ga2O3 coated tape is patterned with transistor arrays and exhibited good performance homogeneity. The representative transistor devices have a threshold voltage of ≈−2.75 V and a breakdown voltage of 116 V measured under a −20 V gate voltage. Moreover, the tape transistors also have good mechanical robustness. The transistors’ good electrical performance, high uniformity, and mechanical robustness suggest that the in situ deposition technique using Hastelloy tape is promising for fabricating various flexible Ga2O3 channeled electronic circuits. Furthermore, it is believed that this technique can be extended to other flexible semiconductor devices that require high‐temperature processing.https://doi.org/10.1002/aelm.202400046flexibleGa2O3in situ growththin‐film transistor |
| spellingShingle | Xiao Tang Yue Zhao Kuang‐Hui Li Chen Liu Hendrik Faber Wedyan Babatain Che‐Hao Liao Saravanan Yuvaraja Vishal Khandelwal Dhanu Chettri Haicheng Cao Yi Lu Chuanju Wang Thomas D. Anthopoulos Xixiang Zhang Xiaohang Li In Situ Growth of (−201) Fiber‐Textured β‐Ga2O3 Semiconductor Tape for Flexible Thin‐Film Transistor Advanced Electronic Materials flexible Ga2O3 in situ growth thin‐film transistor |
| title | In Situ Growth of (−201) Fiber‐Textured β‐Ga2O3 Semiconductor Tape for Flexible Thin‐Film Transistor |
| title_full | In Situ Growth of (−201) Fiber‐Textured β‐Ga2O3 Semiconductor Tape for Flexible Thin‐Film Transistor |
| title_fullStr | In Situ Growth of (−201) Fiber‐Textured β‐Ga2O3 Semiconductor Tape for Flexible Thin‐Film Transistor |
| title_full_unstemmed | In Situ Growth of (−201) Fiber‐Textured β‐Ga2O3 Semiconductor Tape for Flexible Thin‐Film Transistor |
| title_short | In Situ Growth of (−201) Fiber‐Textured β‐Ga2O3 Semiconductor Tape for Flexible Thin‐Film Transistor |
| title_sort | in situ growth of 201 fiber textured β ga2o3 semiconductor tape for flexible thin film transistor |
| topic | flexible Ga2O3 in situ growth thin‐film transistor |
| url | https://doi.org/10.1002/aelm.202400046 |
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