A non-pyrophoric precursor for the low temperature deposition of metallic aluminium

Abstract The development of microelectronics prompts a search for precursors that can deposit conductive features. There is scarce research on Al as it is normally deposited using pyrophoric AlH3 etherates/aminates. Ligands can impart increased stability while maintaining the ability to deposit targ...

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Main Authors: Erica N. Faria, Samuel P. Douglas, Shreya Mrig, Leonardo Santoni, Adam J. Clancy, Daniel W. N. Wilson, Caroline E. Knapp
Format: Article
Language:English
Published: Nature Portfolio 2025-07-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-025-60786-2
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author Erica N. Faria
Samuel P. Douglas
Shreya Mrig
Leonardo Santoni
Adam J. Clancy
Daniel W. N. Wilson
Caroline E. Knapp
author_facet Erica N. Faria
Samuel P. Douglas
Shreya Mrig
Leonardo Santoni
Adam J. Clancy
Daniel W. N. Wilson
Caroline E. Knapp
author_sort Erica N. Faria
collection DOAJ
description Abstract The development of microelectronics prompts a search for precursors that can deposit conductive features. There is scarce research on Al as it is normally deposited using pyrophoric AlH3 etherates/aminates. Ligands can impart increased stability while maintaining the ability to deposit target materials. Accordingly, we have engineered an aluminium complex that can undergo conversion to Al(0) at 100 °C. Our multi-step synthetic design features β-ketoiminate compounds, [Al(R-ketoiminate)2Cl] (R = Me, Et, i Pr, Ph and Mes, 1-5) as starting materials to obtain aluminium hydride complexes: the polymeric amidoalane Li[AlH2( i Pr-Hacnac)AlH3]n (6) and the imidoalane cluster [AlH2AlH2(N-Mes)3(AlH2 ּ Li(Et2O)2)2] (8). Decomposition of 8 into aluminium metal is observed when heated under vacuum at 100 °C and is confirmed by XRD, TEM, XPS. Deposition of a highly conductive film of Al is achieved from 8 after three weeks under nitrogen at room temperature. This represents a route to metallic aluminium involving non-pyrophoric precursors at low temperatures.
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spelling doaj-art-8b030f2364d444e7bb98b17879d63fb32025-08-20T04:01:36ZengNature PortfolioNature Communications2041-17232025-07-011611710.1038/s41467-025-60786-2A non-pyrophoric precursor for the low temperature deposition of metallic aluminiumErica N. Faria0Samuel P. Douglas1Shreya Mrig2Leonardo Santoni3Adam J. Clancy4Daniel W. N. Wilson5Caroline E. Knapp6Department of Chemistry, University College LondonDepartment of Chemistry, University College LondonDepartment of Chemistry, University College LondonDepartment of Chemistry, University College LondonDepartment of Chemistry, University College LondonDepartment of Chemistry, University College LondonDepartment of Chemistry, University College LondonAbstract The development of microelectronics prompts a search for precursors that can deposit conductive features. There is scarce research on Al as it is normally deposited using pyrophoric AlH3 etherates/aminates. Ligands can impart increased stability while maintaining the ability to deposit target materials. Accordingly, we have engineered an aluminium complex that can undergo conversion to Al(0) at 100 °C. Our multi-step synthetic design features β-ketoiminate compounds, [Al(R-ketoiminate)2Cl] (R = Me, Et, i Pr, Ph and Mes, 1-5) as starting materials to obtain aluminium hydride complexes: the polymeric amidoalane Li[AlH2( i Pr-Hacnac)AlH3]n (6) and the imidoalane cluster [AlH2AlH2(N-Mes)3(AlH2 ּ Li(Et2O)2)2] (8). Decomposition of 8 into aluminium metal is observed when heated under vacuum at 100 °C and is confirmed by XRD, TEM, XPS. Deposition of a highly conductive film of Al is achieved from 8 after three weeks under nitrogen at room temperature. This represents a route to metallic aluminium involving non-pyrophoric precursors at low temperatures.https://doi.org/10.1038/s41467-025-60786-2
spellingShingle Erica N. Faria
Samuel P. Douglas
Shreya Mrig
Leonardo Santoni
Adam J. Clancy
Daniel W. N. Wilson
Caroline E. Knapp
A non-pyrophoric precursor for the low temperature deposition of metallic aluminium
Nature Communications
title A non-pyrophoric precursor for the low temperature deposition of metallic aluminium
title_full A non-pyrophoric precursor for the low temperature deposition of metallic aluminium
title_fullStr A non-pyrophoric precursor for the low temperature deposition of metallic aluminium
title_full_unstemmed A non-pyrophoric precursor for the low temperature deposition of metallic aluminium
title_short A non-pyrophoric precursor for the low temperature deposition of metallic aluminium
title_sort non pyrophoric precursor for the low temperature deposition of metallic aluminium
url https://doi.org/10.1038/s41467-025-60786-2
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