High-performance 2D electronic devices enabled by strong and tough two-dimensional polymer with ultra-low dielectric constant
Abstract As the feature size of microelectronic circuits is scaling down to nanometer order, the increasing interconnect crosstalk, resistance-capacitance (RC) delay and power consumption can limit the chip performance and reliability. To address these challenges, new low-k dielectric (k < 2) mat...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2024-12-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-024-53935-6 |
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| author | Qiyi Fang Kongyang Yi Tianshu Zhai Shisong Luo Chen-yang Lin Qing Ai Yifan Zhu Boyu Zhang Gustavo A. Alvarez Yanjie Shao Haolei Zhou Guanhui Gao Yifeng Liu Rui Xu Xiang Zhang Yuzhe Wang Xiaoyin Tian Honghu Zhang Yimo Han Hanyu Zhu Yuji Zhao Zhiting Tian Yu Zhong Zheng Liu Jun Lou |
| author_facet | Qiyi Fang Kongyang Yi Tianshu Zhai Shisong Luo Chen-yang Lin Qing Ai Yifan Zhu Boyu Zhang Gustavo A. Alvarez Yanjie Shao Haolei Zhou Guanhui Gao Yifeng Liu Rui Xu Xiang Zhang Yuzhe Wang Xiaoyin Tian Honghu Zhang Yimo Han Hanyu Zhu Yuji Zhao Zhiting Tian Yu Zhong Zheng Liu Jun Lou |
| author_sort | Qiyi Fang |
| collection | DOAJ |
| description | Abstract As the feature size of microelectronic circuits is scaling down to nanometer order, the increasing interconnect crosstalk, resistance-capacitance (RC) delay and power consumption can limit the chip performance and reliability. To address these challenges, new low-k dielectric (k < 2) materials need to be developed to replace current silicon dioxide (k = 3.9) or SiCOH, etc. However, existing low-k dielectric materials, such as organosilicate glass or polymeric dielectrics, suffer from poor thermal and mechanical properties. Two-dimensional polymers (2DPs) are considered promising low-k dielectric materials because of their good thermal and mechanical properties, high porosity and designability. Here, we report a chemical-vapor-deposition (CVD) method for growing fluoride rich 2DP-F films on arbitrary substrates. We show that the grown 2DP-F thin films exhibit ultra-low dielectric constant (in plane k = 1.85 and out-of-plane k = 1.82) and remarkable mechanical properties (Young’s modulus > 15 GPa). We also demonstrated the improved performance of monolayer MoS2 field-effect-transistors when utilizing 2DP-F thin films as dielectric substrates. |
| format | Article |
| id | doaj-art-88b8b3094b9249099fb01c880fe386ce |
| institution | Kabale University |
| issn | 2041-1723 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-88b8b3094b9249099fb01c880fe386ce2025-01-05T12:35:37ZengNature PortfolioNature Communications2041-17232024-12-011511910.1038/s41467-024-53935-6High-performance 2D electronic devices enabled by strong and tough two-dimensional polymer with ultra-low dielectric constantQiyi Fang0Kongyang Yi1Tianshu Zhai2Shisong Luo3Chen-yang Lin4Qing Ai5Yifan Zhu6Boyu Zhang7Gustavo A. Alvarez8Yanjie Shao9Haolei Zhou10Guanhui Gao11Yifeng Liu12Rui Xu13Xiang Zhang14Yuzhe Wang15Xiaoyin Tian16Honghu Zhang17Yimo Han18Hanyu Zhu19Yuji Zhao20Zhiting Tian21Yu Zhong22Zheng Liu23Jun Lou24Department of Materials Science and NanoEngineering and the Rice Advanced Materials Institute, Rice UniversitySchool of Materials Science and Engineering, Nanyang Technological UniversityDepartment of Materials Science and NanoEngineering and the Rice Advanced Materials Institute, Rice UniversityDepartment of Electrical and Computer Engineering, Rice UniversityDepartment of Materials Science and NanoEngineering and the Rice Advanced Materials Institute, Rice UniversityDepartment of Materials Science and NanoEngineering and the Rice Advanced Materials Institute, Rice UniversityDepartment of Materials Science and NanoEngineering and the Rice Advanced Materials Institute, Rice UniversityDepartment of Materials Science and NanoEngineering and the Rice Advanced Materials Institute, Rice UniversitySibley School of Mechanical and Aerospace Engineering, Cornell UniversityDepartment of Electrical Engineering and Computer Science, Massachusetts Institute of TechnologyDepartment of Materials Science and Engineering, Cornell UniversityDepartment of Materials Science and NanoEngineering and the Rice Advanced Materials Institute, Rice UniversityDepartment of Materials Science and NanoEngineering and the Rice Advanced Materials Institute, Rice UniversityDepartment of Materials Science and NanoEngineering and the Rice Advanced Materials Institute, Rice UniversityDepartment of Materials Science and NanoEngineering and the Rice Advanced Materials Institute, Rice UniversityDepartment of Materials Science and Engineering, Cornell UniversityDepartment of Materials Science and NanoEngineering and the Rice Advanced Materials Institute, Rice UniversityNational Synchrotron Light Source II, Brookhaven National LaboratoryDepartment of Materials Science and NanoEngineering and the Rice Advanced Materials Institute, Rice UniversityDepartment of Materials Science and NanoEngineering and the Rice Advanced Materials Institute, Rice UniversityDepartment of Electrical and Computer Engineering, Rice UniversitySibley School of Mechanical and Aerospace Engineering, Cornell UniversityDepartment of Materials Science and Engineering, Cornell UniversitySchool of Materials Science and Engineering, Nanyang Technological UniversityDepartment of Materials Science and NanoEngineering and the Rice Advanced Materials Institute, Rice UniversityAbstract As the feature size of microelectronic circuits is scaling down to nanometer order, the increasing interconnect crosstalk, resistance-capacitance (RC) delay and power consumption can limit the chip performance and reliability. To address these challenges, new low-k dielectric (k < 2) materials need to be developed to replace current silicon dioxide (k = 3.9) or SiCOH, etc. However, existing low-k dielectric materials, such as organosilicate glass or polymeric dielectrics, suffer from poor thermal and mechanical properties. Two-dimensional polymers (2DPs) are considered promising low-k dielectric materials because of their good thermal and mechanical properties, high porosity and designability. Here, we report a chemical-vapor-deposition (CVD) method for growing fluoride rich 2DP-F films on arbitrary substrates. We show that the grown 2DP-F thin films exhibit ultra-low dielectric constant (in plane k = 1.85 and out-of-plane k = 1.82) and remarkable mechanical properties (Young’s modulus > 15 GPa). We also demonstrated the improved performance of monolayer MoS2 field-effect-transistors when utilizing 2DP-F thin films as dielectric substrates.https://doi.org/10.1038/s41467-024-53935-6 |
| spellingShingle | Qiyi Fang Kongyang Yi Tianshu Zhai Shisong Luo Chen-yang Lin Qing Ai Yifan Zhu Boyu Zhang Gustavo A. Alvarez Yanjie Shao Haolei Zhou Guanhui Gao Yifeng Liu Rui Xu Xiang Zhang Yuzhe Wang Xiaoyin Tian Honghu Zhang Yimo Han Hanyu Zhu Yuji Zhao Zhiting Tian Yu Zhong Zheng Liu Jun Lou High-performance 2D electronic devices enabled by strong and tough two-dimensional polymer with ultra-low dielectric constant Nature Communications |
| title | High-performance 2D electronic devices enabled by strong and tough two-dimensional polymer with ultra-low dielectric constant |
| title_full | High-performance 2D electronic devices enabled by strong and tough two-dimensional polymer with ultra-low dielectric constant |
| title_fullStr | High-performance 2D electronic devices enabled by strong and tough two-dimensional polymer with ultra-low dielectric constant |
| title_full_unstemmed | High-performance 2D electronic devices enabled by strong and tough two-dimensional polymer with ultra-low dielectric constant |
| title_short | High-performance 2D electronic devices enabled by strong and tough two-dimensional polymer with ultra-low dielectric constant |
| title_sort | high performance 2d electronic devices enabled by strong and tough two dimensional polymer with ultra low dielectric constant |
| url | https://doi.org/10.1038/s41467-024-53935-6 |
| work_keys_str_mv | AT qiyifang highperformance2delectronicdevicesenabledbystrongandtoughtwodimensionalpolymerwithultralowdielectricconstant AT kongyangyi highperformance2delectronicdevicesenabledbystrongandtoughtwodimensionalpolymerwithultralowdielectricconstant AT tianshuzhai highperformance2delectronicdevicesenabledbystrongandtoughtwodimensionalpolymerwithultralowdielectricconstant AT shisongluo highperformance2delectronicdevicesenabledbystrongandtoughtwodimensionalpolymerwithultralowdielectricconstant AT chenyanglin highperformance2delectronicdevicesenabledbystrongandtoughtwodimensionalpolymerwithultralowdielectricconstant AT qingai highperformance2delectronicdevicesenabledbystrongandtoughtwodimensionalpolymerwithultralowdielectricconstant AT yifanzhu highperformance2delectronicdevicesenabledbystrongandtoughtwodimensionalpolymerwithultralowdielectricconstant AT boyuzhang highperformance2delectronicdevicesenabledbystrongandtoughtwodimensionalpolymerwithultralowdielectricconstant AT gustavoaalvarez highperformance2delectronicdevicesenabledbystrongandtoughtwodimensionalpolymerwithultralowdielectricconstant AT yanjieshao highperformance2delectronicdevicesenabledbystrongandtoughtwodimensionalpolymerwithultralowdielectricconstant AT haoleizhou highperformance2delectronicdevicesenabledbystrongandtoughtwodimensionalpolymerwithultralowdielectricconstant AT guanhuigao highperformance2delectronicdevicesenabledbystrongandtoughtwodimensionalpolymerwithultralowdielectricconstant AT yifengliu highperformance2delectronicdevicesenabledbystrongandtoughtwodimensionalpolymerwithultralowdielectricconstant AT ruixu highperformance2delectronicdevicesenabledbystrongandtoughtwodimensionalpolymerwithultralowdielectricconstant AT xiangzhang highperformance2delectronicdevicesenabledbystrongandtoughtwodimensionalpolymerwithultralowdielectricconstant AT yuzhewang highperformance2delectronicdevicesenabledbystrongandtoughtwodimensionalpolymerwithultralowdielectricconstant AT xiaoyintian highperformance2delectronicdevicesenabledbystrongandtoughtwodimensionalpolymerwithultralowdielectricconstant AT honghuzhang highperformance2delectronicdevicesenabledbystrongandtoughtwodimensionalpolymerwithultralowdielectricconstant AT yimohan highperformance2delectronicdevicesenabledbystrongandtoughtwodimensionalpolymerwithultralowdielectricconstant AT hanyuzhu highperformance2delectronicdevicesenabledbystrongandtoughtwodimensionalpolymerwithultralowdielectricconstant AT yujizhao highperformance2delectronicdevicesenabledbystrongandtoughtwodimensionalpolymerwithultralowdielectricconstant AT zhitingtian highperformance2delectronicdevicesenabledbystrongandtoughtwodimensionalpolymerwithultralowdielectricconstant AT yuzhong highperformance2delectronicdevicesenabledbystrongandtoughtwodimensionalpolymerwithultralowdielectricconstant AT zhengliu highperformance2delectronicdevicesenabledbystrongandtoughtwodimensionalpolymerwithultralowdielectricconstant AT junlou highperformance2delectronicdevicesenabledbystrongandtoughtwodimensionalpolymerwithultralowdielectricconstant |