Rational composition engineering for high‐quality Pb–Sn photodetector toward sensitive near‐infrared digital imaging arrays
Abstract Broadband photodetectors (PDs) capable of multi‐wavelength detection have garnered significant interest for applications in environmental monitoring, optical communication, spectral analysis, and imaging sensing. Low‐bandgap Pb–Sn hybrid perovskite photodetectors can extend the spectral res...
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Wiley
2025-01-01
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| Online Access: | https://doi.org/10.1002/inf2.12615 |
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| author | Huan Li Yu Gao Xin Hong Kanghui Ke Zilong Ye Siwei Zhang Kefei Shi Zhuo Peng Hao Yan Man‐Chung Tang Youwei Yao Ben Zhong Tang Guodan Wei Feiyu Kang |
| author_facet | Huan Li Yu Gao Xin Hong Kanghui Ke Zilong Ye Siwei Zhang Kefei Shi Zhuo Peng Hao Yan Man‐Chung Tang Youwei Yao Ben Zhong Tang Guodan Wei Feiyu Kang |
| author_sort | Huan Li |
| collection | DOAJ |
| description | Abstract Broadband photodetectors (PDs) capable of multi‐wavelength detection have garnered significant interest for applications in environmental monitoring, optical communication, spectral analysis, and imaging sensing. Low‐bandgap Pb–Sn hybrid perovskite photodetectors can extend the spectral response from the ultraviolet–visible (UV–vis) range to the near‐infrared (NIR) and reduce the toxicity associated with Pb2+. The strategic introduction of Sn2+ into Cs0.15FA0.85PbxSn1−xI3 (x = 1, 0.8, 0.6, 0.5, 0.4, 0.2, and 0) not only preserves the cubic crystal structure with conformal multigrain growth but also broadens the film's absorption spectrum from 800 to 1000 nm NIR region. This indicates a well‐controlled tunability of the Pb–Sn binary perovskite system. Specifically, the self‐powered photodetector with a device structure of ITO/NiOx/PTAA/Cs0.15FA0.85Pb0.5Sn0.5I3/PCBM/BCP/Ag has shown remarkable optoelectrical properties. It exhibits a high external quantum efficiency (EQE) of up to 80% across the spectrum from 300 to 1000 nm, a responsivity (R) exceeding 0.5 A/W, and high detectivity (D*) value of 1.04 × 1012 Jones at 910 nm and 3.38 × 1011 Jones at 1000 nm after weak attenuation. Intriguingly, the dark current of the Cs0.15FA0.85Pb0.5Sn0.5I3 device is four orders of magnitude lower than that of devices made with pristine Pb or Sn only, strongly correlating with its significantly increased built‐in potential and reduced trap density. Consequently, it demonstrates a −3 dB bandwidth of 2.23 × 104 Hz, fast rise and decay times of 61 and 30 μs, respectively, and a linear dynamic range (LDR) of 155 dB. Benefiting from its high sensitivity, a 5 × 5 PD array for NIR imaging and non‐invasive pulse detection for photoplethysmography applications has been successfully demonstrated, showcasing the prosperous potential of Pb–Sn hybrid perovskite in the NIR range. |
| format | Article |
| id | doaj-art-885005e6d2444d3b93e707e7c56a3c6e |
| institution | Kabale University |
| issn | 2567-3165 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Wiley |
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| spelling | doaj-art-885005e6d2444d3b93e707e7c56a3c6e2025-01-17T04:48:29ZengWileyInfoMat2567-31652025-01-0171n/an/a10.1002/inf2.12615Rational composition engineering for high‐quality Pb–Sn photodetector toward sensitive near‐infrared digital imaging arraysHuan Li0Yu Gao1Xin Hong2Kanghui Ke3Zilong Ye4Siwei Zhang5Kefei Shi6Zhuo Peng7Hao Yan8Man‐Chung Tang9Youwei Yao10Ben Zhong Tang11Guodan Wei12Feiyu Kang13Institute of Materials Research, Tsinghua Shenzhen International Graduate School Tsinghua University Shenzhen the People's Republic of ChinaTsinghua‐Berkeley Shenzhen Institute Tsinghua University Shenzhen the People's Republic of ChinaInstitute of Materials Research, Tsinghua Shenzhen International Graduate School Tsinghua University Shenzhen the People's Republic of ChinaInstitute of Materials Research, Tsinghua Shenzhen International Graduate School Tsinghua University Shenzhen the People's Republic of ChinaInstitute of Materials Research, Tsinghua Shenzhen International Graduate School Tsinghua University Shenzhen the People's Republic of ChinaDepartment of Chemistry and the Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction The Hong Kong University of Science and Technology Hong Kong the People's Republic of ChinaTsinghua‐Berkeley Shenzhen Institute Tsinghua University Shenzhen the People's Republic of ChinaTsinghua‐Berkeley Shenzhen Institute Tsinghua University Shenzhen the People's Republic of ChinaInstitute of Materials Research, Tsinghua Shenzhen International Graduate School Tsinghua University Shenzhen the People's Republic of ChinaInstitute of Materials Research, Tsinghua Shenzhen International Graduate School Tsinghua University Shenzhen the People's Republic of ChinaInstitute of Materials Research, Tsinghua Shenzhen International Graduate School Tsinghua University Shenzhen the People's Republic of ChinaDepartment of Chemistry and the Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction The Hong Kong University of Science and Technology Hong Kong the People's Republic of ChinaInstitute of Materials Research, Tsinghua Shenzhen International Graduate School Tsinghua University Shenzhen the People's Republic of ChinaInstitute of Materials Research, Tsinghua Shenzhen International Graduate School Tsinghua University Shenzhen the People's Republic of ChinaAbstract Broadband photodetectors (PDs) capable of multi‐wavelength detection have garnered significant interest for applications in environmental monitoring, optical communication, spectral analysis, and imaging sensing. Low‐bandgap Pb–Sn hybrid perovskite photodetectors can extend the spectral response from the ultraviolet–visible (UV–vis) range to the near‐infrared (NIR) and reduce the toxicity associated with Pb2+. The strategic introduction of Sn2+ into Cs0.15FA0.85PbxSn1−xI3 (x = 1, 0.8, 0.6, 0.5, 0.4, 0.2, and 0) not only preserves the cubic crystal structure with conformal multigrain growth but also broadens the film's absorption spectrum from 800 to 1000 nm NIR region. This indicates a well‐controlled tunability of the Pb–Sn binary perovskite system. Specifically, the self‐powered photodetector with a device structure of ITO/NiOx/PTAA/Cs0.15FA0.85Pb0.5Sn0.5I3/PCBM/BCP/Ag has shown remarkable optoelectrical properties. It exhibits a high external quantum efficiency (EQE) of up to 80% across the spectrum from 300 to 1000 nm, a responsivity (R) exceeding 0.5 A/W, and high detectivity (D*) value of 1.04 × 1012 Jones at 910 nm and 3.38 × 1011 Jones at 1000 nm after weak attenuation. Intriguingly, the dark current of the Cs0.15FA0.85Pb0.5Sn0.5I3 device is four orders of magnitude lower than that of devices made with pristine Pb or Sn only, strongly correlating with its significantly increased built‐in potential and reduced trap density. Consequently, it demonstrates a −3 dB bandwidth of 2.23 × 104 Hz, fast rise and decay times of 61 and 30 μs, respectively, and a linear dynamic range (LDR) of 155 dB. Benefiting from its high sensitivity, a 5 × 5 PD array for NIR imaging and non‐invasive pulse detection for photoplethysmography applications has been successfully demonstrated, showcasing the prosperous potential of Pb–Sn hybrid perovskite in the NIR range.https://doi.org/10.1002/inf2.12615built‐in potentialimaging applicationnear‐infrared photodetectorsPb–Sn hybrid perovskite |
| spellingShingle | Huan Li Yu Gao Xin Hong Kanghui Ke Zilong Ye Siwei Zhang Kefei Shi Zhuo Peng Hao Yan Man‐Chung Tang Youwei Yao Ben Zhong Tang Guodan Wei Feiyu Kang Rational composition engineering for high‐quality Pb–Sn photodetector toward sensitive near‐infrared digital imaging arrays InfoMat built‐in potential imaging application near‐infrared photodetectors Pb–Sn hybrid perovskite |
| title | Rational composition engineering for high‐quality Pb–Sn photodetector toward sensitive near‐infrared digital imaging arrays |
| title_full | Rational composition engineering for high‐quality Pb–Sn photodetector toward sensitive near‐infrared digital imaging arrays |
| title_fullStr | Rational composition engineering for high‐quality Pb–Sn photodetector toward sensitive near‐infrared digital imaging arrays |
| title_full_unstemmed | Rational composition engineering for high‐quality Pb–Sn photodetector toward sensitive near‐infrared digital imaging arrays |
| title_short | Rational composition engineering for high‐quality Pb–Sn photodetector toward sensitive near‐infrared digital imaging arrays |
| title_sort | rational composition engineering for high quality pb sn photodetector toward sensitive near infrared digital imaging arrays |
| topic | built‐in potential imaging application near‐infrared photodetectors Pb–Sn hybrid perovskite |
| url | https://doi.org/10.1002/inf2.12615 |
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