Effect of the Change of Deposition Time on the Secondary Direction and Abnormal Shape of Grains Growth of SnO2 Thin Films
SnO2 thin films were grown on Si substrate using the low pressure chemical vapor deposition method. Observations made through electron microscopy indicate that thin films tend to grow with a constant direction when deposited at a temperature of 420°C for 5, 10, 20, or 30 min. However, when the depos...
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2015-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2015/350196 |
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