High Performance GaSb-Based DBR Laser with On-Chip Integrated Power Amplifier via Gain-Match Design

High Performance GaSb-Based DBR Laser with On-Chip Integrated Power Amplifier via Gain-Match Design

We reported on a single-longitudinal-mode operated distributed Bragg reflector laser diode emitting at 1950 nm with an on-chip integrated power amplifier. Second-order Chromium–Bragg gratings are carefully designed and fabricated at the end of the ridge waveguide. Achieving a stable single-mode oper...

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Bibliographic Details
Main Authors: Juntian Cao, Chengao Yang, Yihang Chen, Hongguang Yu, Jianmei Shi, Haoran Wen, Zhengqi Geng, Zhiyuan Wang, Hao Tan, Yu Zhang, Donghai Wu, Yingqiang Xu, Haiqiao Ni, Zhichuan Niu
Format: Article
Language:English
Published: MDPI AG 2024-12-01
Series:Applied Sciences
Subjects:
GaSb-based diode lasers
single-longitudinal mode
distributed Bragg reflector
power amplifier
Online Access:https://www.mdpi.com/2076-3417/15/1/41
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