Boosting bulk photovoltaic effect in transition metal dichalcogenide by edge semimetal contact
Abstract Oxide materials with a non-centrosymmetric structure exhibit bulk photovoltaic effect (BPVE) but with a low cell efficiency. Over the past few years, relatively larger BPVE coefficients have been reported for two-dimensional (2D) layers and stacks with asymmety-induced spontaneous polarizat...
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Publishing Group
2025-01-01
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| Series: | Light: Science & Applications |
| Online Access: | https://doi.org/10.1038/s41377-024-01691-z |
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| _version_ | 1841559077266653184 |
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| author | Shuang Qiao Jihong Liu Chengdong Yao Ni Yang Fangyuan Zheng Wanqing Meng Yi Wan Philip C. Y. Chow Dong-Keun Ki Lijie Zhang Yumeng Shi Lain-Jong Li |
| author_facet | Shuang Qiao Jihong Liu Chengdong Yao Ni Yang Fangyuan Zheng Wanqing Meng Yi Wan Philip C. Y. Chow Dong-Keun Ki Lijie Zhang Yumeng Shi Lain-Jong Li |
| author_sort | Shuang Qiao |
| collection | DOAJ |
| description | Abstract Oxide materials with a non-centrosymmetric structure exhibit bulk photovoltaic effect (BPVE) but with a low cell efficiency. Over the past few years, relatively larger BPVE coefficients have been reported for two-dimensional (2D) layers and stacks with asymmety-induced spontaneous polarization. Here, we report a crucial breakthrough in boosting the BPVE in 3R-MoS2 by adopting edge contact (EC) geometry using bismuth semimetal electrode. In clear contrast to the typically used top contact (TC) geometry, the EC metal which strongly adheres to the edges and the subtrates can induce a pronounced tensile strain to the 3R-MoS2, and the lateral contact geometry allows to completely access to in-plane polarization from underneath layers reachable by light, leading to >100 times of BPVE enhancement in photocurrent. We further design a 3R-MoS2/WSe2 heterojunction to demonstrate constructive coupling of BPVE with the conventional photovoltaic effect, indicating their potential in photodetectors and photovoltaic devices. |
| format | Article |
| id | doaj-art-865efa2fefaa43f3a3dbd121989d4ede |
| institution | Kabale University |
| issn | 2047-7538 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Nature Publishing Group |
| record_format | Article |
| series | Light: Science & Applications |
| spelling | doaj-art-865efa2fefaa43f3a3dbd121989d4ede2025-01-05T12:46:49ZengNature Publishing GroupLight: Science & Applications2047-75382025-01-011411910.1038/s41377-024-01691-zBoosting bulk photovoltaic effect in transition metal dichalcogenide by edge semimetal contactShuang Qiao0Jihong Liu1Chengdong Yao2Ni Yang3Fangyuan Zheng4Wanqing Meng5Yi Wan6Philip C. Y. Chow7Dong-Keun Ki8Lijie Zhang9Yumeng Shi10Lain-Jong Li11Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei UniversityHebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei UniversityDepartment of Mechanical Engineering, The University of Hong KongDepartment of Mechanical Engineering, The University of Hong KongDepartment of Mechanical Engineering, The University of Hong KongDepartment of Mechanical Engineering, The University of Hong KongDepartment of Mechanical Engineering, The University of Hong KongDepartment of Mechanical Engineering, The University of Hong KongDepartment of Physics and HK Institute of Quantum Science & Technology, The University of Hong KongKey Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou UniversityKey Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong UniversityDepartment of Mechanical Engineering, The University of Hong KongAbstract Oxide materials with a non-centrosymmetric structure exhibit bulk photovoltaic effect (BPVE) but with a low cell efficiency. Over the past few years, relatively larger BPVE coefficients have been reported for two-dimensional (2D) layers and stacks with asymmety-induced spontaneous polarization. Here, we report a crucial breakthrough in boosting the BPVE in 3R-MoS2 by adopting edge contact (EC) geometry using bismuth semimetal electrode. In clear contrast to the typically used top contact (TC) geometry, the EC metal which strongly adheres to the edges and the subtrates can induce a pronounced tensile strain to the 3R-MoS2, and the lateral contact geometry allows to completely access to in-plane polarization from underneath layers reachable by light, leading to >100 times of BPVE enhancement in photocurrent. We further design a 3R-MoS2/WSe2 heterojunction to demonstrate constructive coupling of BPVE with the conventional photovoltaic effect, indicating their potential in photodetectors and photovoltaic devices.https://doi.org/10.1038/s41377-024-01691-z |
| spellingShingle | Shuang Qiao Jihong Liu Chengdong Yao Ni Yang Fangyuan Zheng Wanqing Meng Yi Wan Philip C. Y. Chow Dong-Keun Ki Lijie Zhang Yumeng Shi Lain-Jong Li Boosting bulk photovoltaic effect in transition metal dichalcogenide by edge semimetal contact Light: Science & Applications |
| title | Boosting bulk photovoltaic effect in transition metal dichalcogenide by edge semimetal contact |
| title_full | Boosting bulk photovoltaic effect in transition metal dichalcogenide by edge semimetal contact |
| title_fullStr | Boosting bulk photovoltaic effect in transition metal dichalcogenide by edge semimetal contact |
| title_full_unstemmed | Boosting bulk photovoltaic effect in transition metal dichalcogenide by edge semimetal contact |
| title_short | Boosting bulk photovoltaic effect in transition metal dichalcogenide by edge semimetal contact |
| title_sort | boosting bulk photovoltaic effect in transition metal dichalcogenide by edge semimetal contact |
| url | https://doi.org/10.1038/s41377-024-01691-z |
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