Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonators with Q-Factor above 250,000

Fabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonators with Q-Factor above 250,000

In this work, the fabrication of wafer-level vacuum-packaged 3C-SiC on Si double- clamped beam resonators via glass–silicon anodic bonding using Ti-based vacuum gettering is reported. Open-loop resonance measurements are performed on the vacuum-packaged devices, showing Q-factor values up to 290,000...

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Bibliographic Details
Main Authors: Sergio Sapienza, Luca Belsito, Matteo Ferri, Ivan Elmi, Marcin Zielinski, Francesco La Via, Alberto Roncaglia
Format: Article
Language:English
Published: MDPI AG 2024-03-01
Series:Proceedings
Subjects:
3C-SiC
Q-factor
Ti getter
Online Access:https://www.mdpi.com/2504-3900/97/1/44
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