Physics-Based SPICE-Compatible Compact Model of FLASH Memory With Poly-Si Channel for Computing-in-Memory Applications

Physics-Based SPICE-Compatible Compact Model of FLASH Memory With Poly-Si Channel for Computing-in-Memory Applications

Recently, three-dimensional FLASH memory with multi-level cell characteristics has attracted increasing attention to enhance the capabilities of artificial intelligence (AI) by leveraging computingin-memory (CIM) systems. The focus is to maximize the computing performance and design FLASH memory sui...

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Bibliographic Details
Main Authors: Jung Rae Cho, Donghyun Ryu, Donguk Kim, Wonjung Kim, Yeonwoo Kim, Changwook Kim, Yoon Kim, Myounggon Kang, Jiyong Woo, Dae Hwan Kim
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
FLASH
in-memory computing
SPICE modeling
Online Access:https://ieeexplore.ieee.org/document/10778276/
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