Enhancement of the thermoelectric figure of merit in the Dirac semimetal Cd3As2 by band-structure and -filling control
Topological materials attract a considerable research interest because of their characteristic band structure giving rise to various new phenomena in quantum physics. Besides this, they are tempting from a functional materials point of view: Topological materials bear potential for an enhanced therm...
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2024-12-01
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| Series: | Science and Technology of Advanced Materials |
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| Online Access: | https://www.tandfonline.com/doi/10.1080/14686996.2024.2412971 |
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| author | Markus Kriener Takashi Koretsune Ryotaro Arita Yoshinori Tokura Yasujiro Taguchi |
| author_facet | Markus Kriener Takashi Koretsune Ryotaro Arita Yoshinori Tokura Yasujiro Taguchi |
| author_sort | Markus Kriener |
| collection | DOAJ |
| description | Topological materials attract a considerable research interest because of their characteristic band structure giving rise to various new phenomena in quantum physics. Besides this, they are tempting from a functional materials point of view: Topological materials bear potential for an enhanced thermoelectric efficiency because they possess the required ingredients, such as intermediate carrier concentrations, large mobilities, heavy elements etc. Against this background, this work reports an enhanced thermoelectric performance of the topological Dirac semimetal Cd3As2 upon alloying the trivial semiconductor Zn3As2. This allows to gain fine-tuned control over both the band filling and the band topology in Cd3-xZnxAs2. As a result, the thermoelectric figure of merit exceeds 0.5 around [Formula: see text] and [Formula: see text] at elevated temperatures. The former is due to an enhancement of the power factor, while the latter is a consequence of a strong suppression of the thermal conductivity. In addition, in terms of first-principle band structure calculations, the thermopower in this system is theoretically evaluated, which suggests that the topological aspects of the band structure change when traversing [Formula: see text]. |
| format | Article |
| id | doaj-art-822299e8edb44a5caf6b4f80c2052d3c |
| institution | Kabale University |
| issn | 1468-6996 1878-5514 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Science and Technology of Advanced Materials |
| spelling | doaj-art-822299e8edb44a5caf6b4f80c2052d3c2024-12-23T08:54:38ZengTaylor & Francis GroupScience and Technology of Advanced Materials1468-69961878-55142024-12-0125110.1080/14686996.2024.2412971Enhancement of the thermoelectric figure of merit in the Dirac semimetal Cd3As2 by band-structure and -filling controlMarkus Kriener0Takashi Koretsune1Ryotaro Arita2Yoshinori Tokura3Yasujiro Taguchi4RIKEN Center for Emergent Matter Science (CEMS), Wako, JapanDepartment of Physics, Tohoku University, Miyagi, JapanRIKEN Center for Emergent Matter Science (CEMS), Wako, JapanRIKEN Center for Emergent Matter Science (CEMS), Wako, JapanRIKEN Center for Emergent Matter Science (CEMS), Wako, JapanTopological materials attract a considerable research interest because of their characteristic band structure giving rise to various new phenomena in quantum physics. Besides this, they are tempting from a functional materials point of view: Topological materials bear potential for an enhanced thermoelectric efficiency because they possess the required ingredients, such as intermediate carrier concentrations, large mobilities, heavy elements etc. Against this background, this work reports an enhanced thermoelectric performance of the topological Dirac semimetal Cd3As2 upon alloying the trivial semiconductor Zn3As2. This allows to gain fine-tuned control over both the band filling and the band topology in Cd3-xZnxAs2. As a result, the thermoelectric figure of merit exceeds 0.5 around [Formula: see text] and [Formula: see text] at elevated temperatures. The former is due to an enhancement of the power factor, while the latter is a consequence of a strong suppression of the thermal conductivity. In addition, in terms of first-principle band structure calculations, the thermopower in this system is theoretically evaluated, which suggests that the topological aspects of the band structure change when traversing [Formula: see text].https://www.tandfonline.com/doi/10.1080/14686996.2024.2412971Thermoelectric materialsfigure of meritband structure engineeringband fillingDirac semimetalCd3As2 |
| spellingShingle | Markus Kriener Takashi Koretsune Ryotaro Arita Yoshinori Tokura Yasujiro Taguchi Enhancement of the thermoelectric figure of merit in the Dirac semimetal Cd3As2 by band-structure and -filling control Science and Technology of Advanced Materials Thermoelectric materials figure of merit band structure engineering band filling Dirac semimetal Cd3As2 |
| title | Enhancement of the thermoelectric figure of merit in the Dirac semimetal Cd3As2 by band-structure and -filling control |
| title_full | Enhancement of the thermoelectric figure of merit in the Dirac semimetal Cd3As2 by band-structure and -filling control |
| title_fullStr | Enhancement of the thermoelectric figure of merit in the Dirac semimetal Cd3As2 by band-structure and -filling control |
| title_full_unstemmed | Enhancement of the thermoelectric figure of merit in the Dirac semimetal Cd3As2 by band-structure and -filling control |
| title_short | Enhancement of the thermoelectric figure of merit in the Dirac semimetal Cd3As2 by band-structure and -filling control |
| title_sort | enhancement of the thermoelectric figure of merit in the dirac semimetal cd3as2 by band structure and filling control |
| topic | Thermoelectric materials figure of merit band structure engineering band filling Dirac semimetal Cd3As2 |
| url | https://www.tandfonline.com/doi/10.1080/14686996.2024.2412971 |
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