Chalcogenide perovskites: enticing prospects across a wide range of compositions and optoelectronic properties for stable photodetector devices
Photodetectors are indispensable components of many modern light sensing and imaging devices, converting photon energy into processable electrical signal through absorption, carrier generation and extraction using semiconducting thin films with appropriate optoelectronic properties. Recently, metal...
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IOP Publishing
2025-01-01
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| Online Access: | https://doi.org/10.1088/2632-959X/ad9b40 |
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| author | Shilpa Mariam Samuel Sadasivan Shaji David Avellaneda Avellaneda Bindu Krishnan |
| author_facet | Shilpa Mariam Samuel Sadasivan Shaji David Avellaneda Avellaneda Bindu Krishnan |
| author_sort | Shilpa Mariam Samuel |
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| description | Photodetectors are indispensable components of many modern light sensing and imaging devices, converting photon energy into processable electrical signal through absorption, carrier generation and extraction using semiconducting thin films with appropriate optoelectronic properties. Recently, metal halide perovskites have demonstrated groundbreaking photodetector performance due to their exceptional properties originating from their perovskite structure. However, toxicity and stability remain challenges for their large-scale applications. Inspired by the perovskite structure, intense investigation in search of highly stable, non-toxic and earth abundant materials with superior optoelectronic features has led to the discovery of chalcogenide perovskites (CPs). These are unconventional semiconductors with the formula ABX _3 , where A and B are cations and X is a chalcogen, which covers the compounds with the corner sharing perovskite structures of type II-IV- VI _3 compounds (II = Ba, Sr, Ca, Eu; IV = Zr, Hf; VI = S, Se) and III _1 -III _2 -VI _3 compounds (III _1 and III _2 = Lanthanides, Y, Sc; VI = S, Se). The increased coordination and ionicity in these compounds contribute to their excellent charge transport properties and exceptionally high optical absorption coefficient (> 10 ^5 cm ^−1 ). The present review encompasses theoretical analysis that provides electronic band structures and the orbital contributions that support the excellent optoelectronic properties. Furthermore, the challenging thin film deposition, characterizations, and their application in photodetection focusing on BaZrS _3 -which is the most studied one, are ascribed. Additionally, we suggest prospects that can bring out the true potential of these materials in photodetection and photovoltaics. |
| format | Article |
| id | doaj-art-80f5cf06d65c4d128c6143c542936dc3 |
| institution | Kabale University |
| issn | 2632-959X |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Nano Express |
| spelling | doaj-art-80f5cf06d65c4d128c6143c542936dc32025-01-13T12:05:12ZengIOP PublishingNano Express2632-959X2025-01-016101500210.1088/2632-959X/ad9b40Chalcogenide perovskites: enticing prospects across a wide range of compositions and optoelectronic properties for stable photodetector devicesShilpa Mariam Samuel0https://orcid.org/0009-0002-4506-4633Sadasivan Shaji1https://orcid.org/0000-0001-7745-0796David Avellaneda Avellaneda2https://orcid.org/0000-0002-5328-6503Bindu Krishnan3https://orcid.org/0000-0001-5169-9964Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León. San Nicolás de los Garza, Nuevo León—66455, MéxicoFacultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León. San Nicolás de los Garza, Nuevo León—66455, México; Centro de Innovación, Investigación y Desarrollo en Ingeniería y Tecnología (CIIDIT)- Universidad Autónoma de Nuevo León , Parque de Investigación e Innovación Tecnológica (PIIT), Apodaca, Nuevo León—66455, MéxicoFacultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León. San Nicolás de los Garza, Nuevo León—66455, MéxicoFacultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León. San Nicolás de los Garza, Nuevo León—66455, México; Centro de Innovación, Investigación y Desarrollo en Ingeniería y Tecnología (CIIDIT)- Universidad Autónoma de Nuevo León , Parque de Investigación e Innovación Tecnológica (PIIT), Apodaca, Nuevo León—66455, MéxicoPhotodetectors are indispensable components of many modern light sensing and imaging devices, converting photon energy into processable electrical signal through absorption, carrier generation and extraction using semiconducting thin films with appropriate optoelectronic properties. Recently, metal halide perovskites have demonstrated groundbreaking photodetector performance due to their exceptional properties originating from their perovskite structure. However, toxicity and stability remain challenges for their large-scale applications. Inspired by the perovskite structure, intense investigation in search of highly stable, non-toxic and earth abundant materials with superior optoelectronic features has led to the discovery of chalcogenide perovskites (CPs). These are unconventional semiconductors with the formula ABX _3 , where A and B are cations and X is a chalcogen, which covers the compounds with the corner sharing perovskite structures of type II-IV- VI _3 compounds (II = Ba, Sr, Ca, Eu; IV = Zr, Hf; VI = S, Se) and III _1 -III _2 -VI _3 compounds (III _1 and III _2 = Lanthanides, Y, Sc; VI = S, Se). The increased coordination and ionicity in these compounds contribute to their excellent charge transport properties and exceptionally high optical absorption coefficient (> 10 ^5 cm ^−1 ). The present review encompasses theoretical analysis that provides electronic band structures and the orbital contributions that support the excellent optoelectronic properties. Furthermore, the challenging thin film deposition, characterizations, and their application in photodetection focusing on BaZrS _3 -which is the most studied one, are ascribed. Additionally, we suggest prospects that can bring out the true potential of these materials in photodetection and photovoltaics.https://doi.org/10.1088/2632-959X/ad9b40chalcogenide perovskitesphotodetectorcrystal structureband alignmentoptical bandgapoptoelectronic devices |
| spellingShingle | Shilpa Mariam Samuel Sadasivan Shaji David Avellaneda Avellaneda Bindu Krishnan Chalcogenide perovskites: enticing prospects across a wide range of compositions and optoelectronic properties for stable photodetector devices Nano Express chalcogenide perovskites photodetector crystal structure band alignment optical bandgap optoelectronic devices |
| title | Chalcogenide perovskites: enticing prospects across a wide range of compositions and optoelectronic properties for stable photodetector devices |
| title_full | Chalcogenide perovskites: enticing prospects across a wide range of compositions and optoelectronic properties for stable photodetector devices |
| title_fullStr | Chalcogenide perovskites: enticing prospects across a wide range of compositions and optoelectronic properties for stable photodetector devices |
| title_full_unstemmed | Chalcogenide perovskites: enticing prospects across a wide range of compositions and optoelectronic properties for stable photodetector devices |
| title_short | Chalcogenide perovskites: enticing prospects across a wide range of compositions and optoelectronic properties for stable photodetector devices |
| title_sort | chalcogenide perovskites enticing prospects across a wide range of compositions and optoelectronic properties for stable photodetector devices |
| topic | chalcogenide perovskites photodetector crystal structure band alignment optical bandgap optoelectronic devices |
| url | https://doi.org/10.1088/2632-959X/ad9b40 |
| work_keys_str_mv | AT shilpamariamsamuel chalcogenideperovskitesenticingprospectsacrossawiderangeofcompositionsandoptoelectronicpropertiesforstablephotodetectordevices AT sadasivanshaji chalcogenideperovskitesenticingprospectsacrossawiderangeofcompositionsandoptoelectronicpropertiesforstablephotodetectordevices AT davidavellanedaavellaneda chalcogenideperovskitesenticingprospectsacrossawiderangeofcompositionsandoptoelectronicpropertiesforstablephotodetectordevices AT bindukrishnan chalcogenideperovskitesenticingprospectsacrossawiderangeofcompositionsandoptoelectronicpropertiesforstablephotodetectordevices |